SDA-2000 SDA-2000 GaAs Distributed Amplifier Package: Die, 3.1mm x 1.45mm x 0.102mm RFMDs SDA-2000 is a directly coupled (DC) GaAs Features microwave monolithic integrated circuit (MMIC) distributed DC to 22GHz Operation driver amplifier die designed to support a wide array of high Output Voltage to 8V PP frequency commercial, military, and space applications. They Gain = 12dB Typical are ideal for wideband amplifier gain blocks, modulators, clock Noise Figure = 5.5dB Typical drivers, broadband automated test equipment (ATE), military, and aerospace applications. 410mA Total Current Applications Drive for Single-Ended (SE) MZM NRZ, DPSK, ODB, RZ Clock Driver for RZ and CS Pulse Carver Broadband ATE Military Aerospace Functional Block Diagram Ordering Information SDA-2000 GaAs Distributed Amplifier, GelPak, 10 pieces or more SDA-2000SB Sample Bag, GaAs Distributed Amplifier, GelPak, 2 pieces RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140204 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, 1 of 8 trademarks, and registered trademarks are the property of their respective owners. 2013, RF Micro Devices, Inc. SDA-2000 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Drain Bias Voltage (V ) +9.0 V DD DC Gate Bias Voltage (V ) -2 to +1 V TI DC RFMD Green: RoHS compliant per EU Gate Bias Voltage (V ) (V -8.0) to V V G2 DD DD DC Directive 2011/65/EU, halogen free per dBm IEC 61249-2-21, <1000ppm each of RF Input Power (V = +7.0V ) DD DC antimony trioxide in polymeric materials Operating Junction Temperature (T ) +175 C J and red phosphorus as a flame retardant, and <2% antimony solder. Continuous Power Dissipation (T = +85C) 5 W Exceeding any one or a combination of the Absolute Thermal Resistance (Pad to Die Bottom) 17 C/W Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Storage Temperature -40 to +150 C Maximum Rating conditions to the device may reduce Operating Temperature -40 to +85 C device reliability. Specified typical performance or functional operation of the device under Absolute ESD JESD22-A114 Human Body Maximum Rating conditions is not implied. Class 0 (All Pads) Model (HBM) Nominal Operating Parameters Specification Parameter Unit Condition Min Typ Max T = +25C, V = +8V V = +3.5V A DD , G2 DC, General Performance I = 410mA* DD Operating Frequency DC 22 GHz 3dB BW Gain 12 dB 10GHz Output Voltage 8 V P-P OIP3 at Mid-Band 38 dBm 10GHz P1dB at Mid-Band 24 dBm 10GHz Noise Figure at Mid-Band 6.0 dB 10GHz Input Return Loss 20 dB Output Return Loss 17.5 Supply Current 410 mA Supply Voltage 8.0 V DC *Adjust VTI between -2.0V to 0V to achieve I = 410mA typical. DC DC DD RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140204 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 8