SBB3000 50MHz to 6000MHz InGaP HBT Active Bias Gain Block SBB3000 50MHz to 6000MHz InGaP HBT ACTIVE BIAS GAIN BLOCK Package: Bare Die Product Description Features RFMDs SBB3000 is a high performance InGaP HBT MMIC amplifier utiliz- Single Fixed 5V Supply ing a Darlington configuration with an active bias network. The active bias Patented Self Bias Circuit and network provides stable current over temperature and process Beta varia- Thermal Design tions. The SBB3000 product is designed for high linearity 5V gain block Gain = 16.4dB at 1950MHz applications that require excellent gain flatness, small size, and minimal external components. It is internally matched to 50. P1dB = 15.2dBm at 1950MHz Gain and Return Loss V = 5V, I = 42mA OIP3 = 29.5dBm at 1950MHz S S 30 Optimum Technology Matching Applied Robust 1000V ESD, Class 1C S21 20 HBM GaAs HBT GaAs MESFET 10 Applications InGaP HBT Bias Tee Data, Z = Z = 50 Ohms, T = 25C S L L SiGe BiCMOS 0 PA Driver Amplifier Si BiCMOS RF Pre-Driver and RF Receiver -10 SiGe HBT Path S11 GaAs pHEMT -20 Military Communications Si CMOS S22 Si BJT -30 Test and Instrumentation GaN HEMT 01 2 3 4 5 6 InP HBT Frequency (GHz) RF MEMS LDMOS Specification Parameter Unit Condition Min. Typ. Max. Small Signal Gain 16.6 dB 850MHz 16.4 dB 1950MHz 16.3 dB 2400MHz Output Power at 1dB Compression 15.6 dBm 850MHz 15.2 dBm 1950MHz 15.4 dBm 2400MHz Output Third Order Intercept Point 30.0 dBm 850MHz 29.5 dBm 1950MHz 29.5 dBm 2400MHz Input Return Loss 21 dB 1950MHz Output Return Loss 25.5 dB 1950MHz Noise Figure 3.9 dB 1950MHz Device Operating Voltage 4.2 V R = 20, V = 5.0V DC S Device Operating Current 38 42 46 mA R = 20, V = 5.0V DC S Operational Current Range 30 46 mA Per user preference via R DC Thermal Resistance 80 C/W Junction to lead (89 package) Test Conditions: V = 4.2V, I = 42mA, T = 25C, OIP Tone Spacing = 1MHz, R = 20 , Bias Tee Data, Z = Z = 50 , P per tone = -5dBm D D L 3 DC S L OUT RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS120719 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 5 dBSBB3000 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Max Device Current (l)100 mA D Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- Max Device Voltage (V)6 V D tions is not implied. Max RF Input Power* (See Note) +20 dBm The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No Max Junction Temperature (T)+150 C J license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- Operating Temperature Range (T )-40 to +85 C cation circuitry and specifications at any time without prior notice. L Max Storage Temperature +150 C RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric ESD Rating - Human Body Model Class 1C materials and red phosphorus as a flame retardant, and <2% antimony in solder. (HBM) *Note: Load condition Z = 50 L Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I V < (T - T )/R , j - l and T = T D D J L TH L LEAD SBB3089Z Typical RF Performance at Key Operating Frequencies (Bias Tee Data) Parameter Unit 100 500 850 1950 2140 2400 3500 MHz MHz MHz MHz MHz MHz MHz Small Signal Gain dB 16.9 16.6 16.6 16.4 16.4 16.3 16.1 Output Third Order Intercept Point dBm 29.5 30.5 30.0 29.5 29.0 29.5 27.0 Output Power at 1dB Compression dBm 15.6 16.0 15.6 15.2 15.0 15.4 15.2 Input Return Loss dB 24.0 26.5 24.5 21.0 20.5 20.0 15.5 Output Return Loss dB 21.5 26.0 26.0 25.5 25.5 27.5 21.0 Reverse Isolation dB 19.5 19.0 19.5 19.5 19.5 19.5 19.5 Noise Figure dB 3.7 3.9 3.9 3.9 3.9 4.0 3.8 Test Conditions: V = 4.2V, I = 42mA, OIP3 Tone Spacing = 1MHz, P per tone = -5dBm, R = 20, T = 25C, Z = Z = 50 D D OUT DC L S L SBB3089Z Typical Performance with Bias Tees, V = 5V with R = 20 , I = 42mA D DC D OIP3 versus Frequency, P1dB versus Frequency (-5dBm/tone, 1MHz spacing) 34.0 20.0 32.0 18.0 30.0 16.0 28.0 14.0 25C 25C 26.0 12.0 -40C -40C 85C 85C 24.0 10.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Frequency (GHz) Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 5 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS120719 OIP3 (dBm) P1dB (dBm)