ADVANCED ADVANCE D SGA8343Z Heterostructure Bipolar Transistor Product Overview The Qorvo SGA8343Z is a high-performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6GHz. The SGA8343Z is optimized for 3V operation but can be biased at 2V for low-voltage battery operated systems. The device provides high gain, low NF, and excellent linearity at a low cost. 4-Pin SOT-343 Package It can be operated at very low bias currents in applications where high linearity is not required. Key Features The matte tin finish on the lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS DC6,000MHz compliant per EU Directive 2002/95. 0.9 dB Min Noise Figure at 900 MHz 24 dB Max Gain at 900 MHz This package is also manufactured with green molding 0.10 OPT at 900 MHz compounds that contain no antimony trioxide nor halogenated 1dB +28dBm OIP3 at +9 dBm P fire retardants. High performance and high versatility Applications Functional Block Diagram Analog and Digital Wireless Systems 3G, Cellular, PCS, RFID Fixed Wireless, Pager Systems Driver Stage for Low Power Applications Oscillators Ordering Information Part Number Description Top View SGA8343ZSQ Sample bag with 25 pieces SGA8343ZSR 7 reel with 100 pieces SGA8343Z 7 reel with 3,000 pieces 0.8-1 GHz Assembled Evaluation SGA8343ZPCK1 Board with 5 pc bag 1.8-2 GHz Assembled Evaluation SGA8343ZPCK2 Board with 5 pc bag 2.4-2.5GHz Assembled Evaluation SGA8343ZPCK3 Board with 5 pc bag 1,575MHz Assembled Evaluation SGA8343ZPCK4 Board with 5 pc bag 1 of 12 www.qorvo.com SGA8343Z Data Sheet 021820 Subject to change without notice SGA8343Z Heterostructure Bipolar Transistor Absolute Maximum Ratings Parameter Conditions Rating Collector Current (ICE) 72 mA Base Current (IB) 1 mA Collector Emitter Voltage (VCE) 5 V Collector Base Voltage (VCB) +12 V Emitter Base Voltage (VEB) +4.5 V RF Input Power at Pin 1 +5 dBm Storage Temperature Range (TSOR) -40 to 150C Power Dissipation (PDISS) 350 mW Operating Junction Temperature (TJ) +150C Operating Temperature Range -40 to 85 C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Electrical Specifications Parameter Conditions Min. Typ. Max. Units Unless otherwise noted: VCC/DD=3.3V, T=+25C, Transmit (BASE-COLLECTOR) Mode PA EN=High, LNA EN=Low, C RX=Low 0.90GHz. Z =Z *, Z =Z * 23.9 dB S S L L Maximum Available Gain 1.90GHz 19.3 dB 2.40GHz 17.7 dB 0.90GHz. ZS= OPT, ZL=ZL* 0.94 dB Minimum Noise Figure 1.90GHz 1.10 dB 2.40GHz 1.18 dB (1) Insertion Gain 0.90GHz. Z =Z =50 21.0 22.0 23.0 dB S L (2) Noise Figure 1.9GHz, LNA Application Circuit Board 1.40 1.75 dB (2) Gain 1.9GHz, LNA Application Circuit Board 15.5 16.5 17.5 mA (2) Output IP3 1.9GHz, LNA Application Circuit Board +25.8 +27.8 dBm (2) Output 1dB Compression Point 1.9GHz, LNA Application Circuit Board +7.5 +9.0 dBm DC Current Gain 120 180 300 Breakdown Voltage COLLECTOR-EMITTER +5.7 +6.0 V Thermal Resistance, Junction - Lead 200 C/W jc Operating Voltage COLLECTOR-EMITTER +4.0 V Operating Current COLLECTOR-EMITTER 50 mA Notes: 1. Performance is based on historical statistical analysis. 2. 100% tested on test fixture optimized for 1.9GHz operation. SGA8343Z Data Sheet 021820 Subject to change without notice www.qorvo.com 2 of 12