TQP7M9102 W High Linearity Amplifier Applications Repeaters Mobile Infrastructure CDMA / WCDMA / LTE General Purpose Wireless 3 Pin SOT-89 Package Product Features Functional Block Diagram 400-4000 MHz Backside Paddle - GND +27.5 dBm P1dB +44 dBm Output IP3 17.8 dB Gain at 2140 MHz +5V Single Supply, 135 mA Current Internal RF overdrive protection Internal DC overvoltage protection On chip ESD protection 1 2 3 SOT-89 Package RF IN GND RF OUT / V CC General Description Pin Configuration The TQP7M9102 is a high linearity driver amplifier in a Pin No. Label low-cost, RoHS compliant, surface mount package. This 1 RF IN InGaP/GaAs HBT delivers high performance across a 2 GND broad range of frequencies with +44 dBm OIP3 and +27.5 3 RF OUT/V CC dBm P1dB while only consuming 135 mA quiescent current. All devices are 100% RF and DC tested. Backside Paddle GND The TQP7M9102 incorporates on-chip features that differentiate it from other products in the market. The amplifier integrates an on-chip DC over-voltage and RF over-drive protection. This protects the amplifier from electrical DC voltage surges and high input RF input power levels that may occur in a system. On-chip ESD protection allows the amplifier to have a very robust Class 2 HBM ESD rating. The TQP7M9102 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, and high efficiency are required. The device an Ordering Information excellent candidate for transceiver line cards in current and next generation multi-carrier 3G / 4G base stations. Part No. Description TQP7M9102 0.5 W High Linearity Amplifier TQP7M9102PCB900 869960MHz Evaluation Board TQP7M9102PCB2140 2.112.17GHz Evaluation Board TQP7M9102PCB2600 2.52.7 GHz Evaluation Board Standard T/R size = 1000 pieces on a 7 reel Datasheet: Rev. K 01-26-16 Disclaimer: Subject to change without notice - 1 of 26 - 2016 TriQuint Semiconductor, Inc www.triquint.com / www.qorvo.com TQP7M9102 W High Linearity Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 65 to +150C Device Voltage (V +4.75 +5 +5.25 V CC) RF Input Power, CW, 50, T=25C +27 dBm T -40 +105 C CASE 6 Device Voltage (V ) +8 V Tj for >10 hours MTTF +170 C CC Operation of this device outside the parameter ranges Electrical specifications are measured at specified test given above may cause permanent damage. conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: VCC=+5V, Temp.=+25C, matched 2140MHz reference circuit Parameter Conditions Min Typ Max Units Operational Frequency Range 400 4000 MHz Test Frequency 2140 MHz Gain 15.5 17.8 dB Input Return Loss 12 dB Output Return Loss 10 dB Output P1dB +26.4 +27.5 dBm Output IP3 +41 +43.8 dBm Pout = +9dBm/tone, f = 1 MHz (1) WCDMA Channel Power 50 dBc ACLR +18.5 dBm 3.9 dB Noise Figure Quiescent Current, I See Note 1 115 137 155 mA CQ Thermal Resistance, jc Junction to case 50 C/W Notes: 1. ACLR test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Probability Performance Summary Table (1) Test conditions unless otherwise noted: VCC =+5V, Temp.= +25C, band specific matching networks Frequency 768 869 960 1540 1840 1960 2140 2140 2350 2600 3500 MHz Gain 20.9 21.8 21.7 20.2 20.0 18.4 15.5 17.8 16.0 14.5 14.5 dB Input Return Loss 9 10 17 15 17 13 8 12 17 14.5 17 dB 6 7.5 8 Output Return Loss 8 12 9 7 8 11 8 11 dB Output P1dB +28.4 +27.3 +27.4 +28.2 +27.5 +27.0 +30.7 +27.6 +27.2 +28.0 +26.2 dBm Output IP3 +44 +43 +44 +51 +42 +46 +38 +44 +44 +44 +45 dBm Notes: 1. Reference designs for the various frequencies are either included on this datasheet or may be obtained by contacting sjcapplications.engineering tqs.com. Datasheet: Rev. K 01-26-16 Disclaimer: Subject to change without notice - 2 of 26 - 2016 TriQuint Semiconductor, Inc www.triquint.com / www.qorvo.com