R-REF01-HB

Half-bridge voltage up to 1kV Features TTL-compatible signal input Single 15V to 42V supply Reference Design Shoot-through protection Reference Separate input for low and high-side switch for use with different topologies Design R-REF01-HB Qualified with 65kV/s Vcommon mode =1KV Description The Half-Bridge Gate-Drive Power Supply Reference Design (RD) consists of a half-bridge suitable for voltages up to 1kV and a fully-isolated driver stage with isolated power supplies for the low-side and the high-side switching transistors. It is suitable for single gate/drive supply voltages as low as +4V as well as dual gate drive supply voltages as high as +20V / -5V (30V max) with no maximum duty cycle limitations. Two R12P22005D, R12P21503D, R12P21509D and R12P06S DC/DC modules each are included in the R-REF01-HB design kit. Delivered Board With these converters the following gate drive voltages can be generated: +20V/-5V +15V/-3V or +18V* +15V/-9V +6V *For single ended +18V please check the modification instructions which can be found online (LINK) NOTE: transistors sold separately. The signal ground is galvanically isolated from the power ground and can be connected to fully populated any potential, as long as it is less than 2.5kV with respect to the power potential (high-side and low-side). The limiting element is the gate driver IC specification. Features: Optimized for very high switching speed 2.5kV continuous input to output isolation High gate-drive currents (up to 10A source and sink) The RD is fitted with a SI8273 gate driver, but can be used with any pin-compatible gate driver with a PWM input (SI8274) or for gate driver ICs with reinforced isolation, for example the UCC21520 (dual pinout layout on PCB). This RD can easily be configured for the following topologies (see application suggestions section): LLC half-bridge Asymmetric duty cycle half-bridge (forward and flyback) Active clamp half-bridge (forward and flyback) Full-bridge / phase-shifted full-bridge 3-phase B6 bridge NPC B6 bridge (additional driving circuit for NPC is required) Double pulse test Synchronous boost converter Synchronous buck converter DANGER This board is designed to be used with voltages up to 1kV, only qualified personnel should work with this board. Direct contact with hazardous voltage can cause injury or death Never leave the board operating unattended. After removing the high voltage from the board, discharge the capacitors with a suitable discharging resistor to avoid elec- trical shock Caution: This reference design is built with ESD (electrostatic discharge) sensitive www.recom-power.com/bier components. Always follow ESD prevention procedures when handling the product to avoid failures www.recom-power.com REV.: 2/2019 P-11000V Max +VBridge -VBridge R-REF01-HB Reference Design Specifications (measured at Ta= 25C, 1.5Vin, full load after warm up unless otherwise stated) BASIC CHARACTERISTICS Parameter Condition Min. Typ. Max. Input Voltage Con1 15V 42V Input Voltage Con2 -> Con3 limited by C10 0V 1000V Digital U1, U2, Enable -0.5V 5.5V Logic High Input Threshold 2V Logic Low Input Threshold 0.8V Input Hysteresis 350mV 400mV Maximum Ratings -0.5V 5.5V Driver Section Source and Sink Current (max) 10A Total Drive Voltage positive and negative +4V 30V Propagation Delay system before gate resistors 20ns 40ns 70ns Rise and Fall Times refer to the datasheet of the gate-driver IC Isolation Isolation Voltage input to output 2.5kVDC Component Placement T2 T1 FD2 High Side Switch Low Side Switch R8 R7 R21 R26 Switch Node IC4 IC6 C11 C13 C12 C14 C8 C9 CON2 R3 C12 CON3 C6 IC8 C7 C15 D1 R22 R10 C17 R14 LED3 R9 R11 C19 TTL- U1 U2 compatible Input C16 FB1 FD1 CON1 CON4 Signal High Side Signal Low Side 15V to 42V ENABLE continued on next page www.recom-power.com REV.: 2/2019 P-2 R4 C3 C2 R6 IC2 C4 R5 R24 R15 R19 R16 LED1 IC7 IC1 R12 CON5 R25 R1 C2 LED4 R23 D2 R2 IC5 C18 R17 R20 R18 IC3 LED2 R13 C5