RS1001M Rectron

RS1001M THRU RS1007M SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 10 Amperes FEATURES Low leakage * Low forward voltage * Mounting position : Any * Surge overload rating: 200 Amperes peak * Ideal for printed circuit boards * MSL: Level 2 * RS-10M ( ) .189 4.8 ( ) .173 4.4 .995 (25.3) ( ) .150 3.8 ( ) MECHANICAL DATA .134 3.4 .983 (24.7) * UL listed the recognized component directory, file E94233 * Epoxy: Device has UL flammability classification 94V-O ( .057 1.45) ( ) .114 2.9 ( ) .041 1.05 .083 (2.1) ( ) .098 2.5 ( ) .069 1.7 .043 (1.1) ( ) .031 0.8 .035 (0.9) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ( ) .023 0.6 O Ratings at 25 C ambient temperature unless otherwise specified. resistive or inductive load. ( ) ( ) ( ) .303 7.7 .303 7.7 .303 7.7 .287 (7.3) .287 (7.3) .287 (7.3) Dimensions in inches and (millimeters) o MAXIMUM CHARACTERISTICS ( TA = 25 C unless otherwise noted ) CHARACTERISTICS SYMBOL RS1001M RS1002M RS1003M RS1004M RS1005M RS1006M RS1007M UNITS Maximum Recurrent Peak Reverse Voltage VRRM Volts 50 100 200 400 600 800 1000 Maximum RMS Bridge Input Voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts Maximum Average Forward Rectified Output Current Amps IO 10 at Tc=100 degree with heatsink Peak Forward Surge Current 8.3 ms single half sine-wave Amps IFSM 200 superimposed on rated load 2 2 Typical Current Square Time I T 165.9 A S Typical Thermal Resistance from junction to ambient R1 JA 22 O C/W 1.0 Typical Thermal Resistance from junction to case R 1 JC O -55 to + 150 Operating and Storage Temperature Range C TJ,TSTG o ELECTRICAL CHARACTERISTICS ( TA = 25 C unless otherwise noted ) CHARACTERISTICS SYMBOL RS1001M RS1002M RS1003M RS1004M RS1005M RS1006M RS1007M UNITS Maximum Forward Voltage Drop per element at 5.0A DC VF Volts 1.1 O TA=25 C M Amps 5.0 Maximum Reverse Current at Rated IR O DC Blocking Voltage per element TC=100 C 0.2 mAmps 2014-09 Note:Fully ROHS complian,100% Sn plating (Pb-free. REV: A .074 (1.9) ( ) .059 1.5 .146 ( 3.7 ) ( ) .157 4 .130 ( 3.3 ) ( ) .708 ( 18.0 ) .602 15.3 .669 ( 17.0 ) .578 (14.7) .382 (9 .7 ) (9 ) .366 .3 ( ) f.134 3.4 .122 (3 .1 )RATING AND CHARACTERISTICS CURVES ( RS1001M THRU RS1007M ) 30 300 sine wave 20 0 10 8.3ms 8.3ms 5 1 cycle 200 non-repetitive o o TC = 150 C (TYP) Tj=25 C 2 o TC = 25 C (TYP) 1 100 0.5 0.2 pulse test per one diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1 2 5 10 20 50 100 INSTANTANEOUS FORWARD VOLTAGE, (V) NUMBER OF CYCLE FIG.1 TYPICALFIG.1 TYPICAL INSTINSTAANTNTAANEOUS FORNEOUS FORWWAARDRD FIG.2 SURGE FORFIG.2 SURGE FORWWAARD CURRENTRD CURRENT CAP CAPABILITYABILITY CHARACTERISTICS CHARACTERISTICS 10 4 on glass-epoxi substrate heatsink Tc Tc 8 3 P.C.B soldering land 5mmf 6 sine wave sine wave R-load R-load on heatsink 2 free in air 4 1 2 0 0 80 90 100 110 120 130 140 150 160 0 4 0 80 120 160 CASE TEMPERATURE C AMBIENT TEMPERATURE( C) FIG.3 TYPICALFIG.3 TYPICAL FORFORWWAARD CURRENTRD CURRENT FIG.4 TYPICALFIG.4 TYPICAL FORFORWWAARD CURRENTRD CURRENT DDERAERATTING CURING CURVVE E DERA DERATTING CURING CURVVEE 1.6 with thermal compound 1.5 1.4 1.3 1.2 1.1 1 23 4 5 6 7 8 MOUNTING RORQUE (Kg.cm) FIG.5 CONTFIG.5 CONTAACTCT THERMALTHERMAL RESISTRESISTAANCENCE AVERAGE FORWARD CURRENT, (A) INSTANTANEOUS FORWARD CURRENT, (A) o THERMAL RESISTANCE ( C/W) o PEAK FORWARD SURGE CURRENT, (A) AVERAGE FORWARD CURRENT, (A) IFSM o