RS2001M THRU RS2007M SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 20 Amperes FEATURES * Low leakage * Low forward voltage * Surge overload rating : 300 amperes peak * Mounting position: Any * Ideal for printed circuit boards RS-20M * High forward surge current capability .189 (4.8) .173 (4.4) MECHANICAL DATA .150 (3.8) 1.193 (30.3) .134 (3.4) 1.169 (29.7) * Epoxy: Device has UL flammability classification 94V-O * UL list the recognized component directory,file E94233 .106 (2.7) .096 (2.3) .114 (2.9) .098 (2.5) .087 (2.2) .071 (1.8) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .043 (1.1) .031 (0.8) o Ratings at 25 C ambient temperature unless otherwise specified035 (0.9) .023 (0.6) resistive or inductive load303 (7.7) .303 (7.7) .402 (10.2) .386 (9.8) .287 (7.3) .287 (7.3) Dimensions in inches and (millimeters) O MAXIMUM RATINGS( T A=25 C unless otherwise noted) RATINGS SYMBOL RS2001M RS2002M RS2003M RS2004M RS2005M RS2006M RS2007M UNITS Maximum Recurrent Peak Reverse Voltage V 50 100 200 400 600 800 1000 Volts RRM Maximum RMS Voltage V 35 70 140 280 420 560 700 Volts RMS Maximum DC Blocking Voltage V 50 100 200 400 600 800 1000 Volts DC Maximum Average Forward Rectified Current I Amps o O 20 at T = 55 C C Peak Forward Surge Current 8.3 ms single half sine-wave I Amps FSM 300 superimposed on rated load (JEDEC method) 2 2 Typical Current Squared Time 373.3 I T A S R 1.5 1 JC 0 Typical Thermal Resistance (Note 1) C/W R 22 1 JA 0 Operating and Storage Temperature Range T , T J STG -55 to + 150 C O ELECTRICAL CHARACTERISTICS( T =25 C unless otherwise noted) A CHARACTERISTICS SYMBOL RS2001M RS2005M RS2006M RS2007M RS2002M RS2003M RS2004M UNITS Maximum Instantaneous Forward Voltage at 10A DC V 1.1 Volts F o T = 25 C A Maximum DC Reverse Current 5.0 I R uAmps o at Rated DC Blocking Voltage T = 100 C A 200 NOTES : 1.Thermal Resistance : Heat-sink case mounted or if PCB mounted. 2014-03 2.Fully ROHS complian,100% Sn plating (Pb-free. REV:B . 4165 ( .2) . 5197() .15 30(.)8 .708 (18.0) .80 20(.0)3 .669 (17.0) .77 15(.9)7 .4411 (1 .2) .2405 (1 .8) f ) .138 (3.5 .612 (3.2)RATING AND CHARACTERISTICS CURVES ( RS2001M THRU RS2007M ) 30 60 20 sine wave O O T = 150 C T = 150 C (TYP) C J 50 10 5 40 O T =25 C (TYP) C 2 30 1 20 0.5 10 0.2 Pulse test per one diode 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 4 8 12 16 20 24 INSTANTANEOUS FORWARD VOLTAGE, (V) AVERAGE RECTIFIED FORWARD CURRENT, (A) FIG.1 TYPICAL INSTANTANEOUS FORWARD FIG.2 POWER DISSIPATION CHARACTERITICS 4 300 on glass-epoxi substrate sine wave 0 3 8.3ms 200 P.C.B 1 cycle non-repetitive soldering land 5mmf Tj=25 sine wave R-load 2 free in air 100 1 0 0 1021502050 100 0 40 80 120 160 O NUMBER OF CYCLE AMBIENT TEMPERATURE, ( C) FIG.4 TYPICAL FORWARD CURRENT FIG.3 SURGE FORWARD CURRENT CAPABILITY DERATING CURVE 20 1.2 with thermal compound 1.0 16 0.8 12 heatsink Tc Tc 0.6 8 0.4 4 sine wave 0.2 R-load on heatsink 0 0 10 30 50 70 90 110 130 150 170 2 34 5 6 7 8 O HEAT SINK TEMPERATURE, ( C) MOUNTING TORQUE (kg.cm) FIG.5 TYPICAL FORWARD CURRENT FIG.6 CONTACT THERMAL RESISTANCE fcf DERATING CURVE AVERAGE FORWARD CURREANT, () PEAK FORWARD SURGECAU,RRENT () INSTANTANEOUS FORWARD CURRENT, (A) IFSM O THERMAL RESISTANC(E C/W) AVERAGE FORWARD CURRENT, (A) POWER DISSIPATION, (W)