RS801M THRU RS807M SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes FEATURES * Low leakage * Low forward voltage * Surge overload rating : 200 amperes peak * Mounting position: Any * Ideal for printed circuit boards RS-8M * High forward surge current capability .189 (4.8) .173 (4.4) MECHANICAL DATA .150 (3.8) 1.193 (30.3) .134 (3.4) 1.169 (29.7) * Epoxy: Device has UL flammability classification 94V-O UL list the recognized component directory,file E94233 * .106 (2.7) .096 (2.3) .114 (2.9) .098 (2.5) .087 (2.2) .071 (1.8) .031 (0.8) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .023 (0.6) .043 (1.1) o Ratings at 25 C ambient temperature unless otherwise specified035 (0.9) resistive or inductive load402 (10.2) .303 (7.7) .303 (7.7) .386 (9.8) .287 (7.3) .287 (7.3) Dimensions in inches and (millimeters) O MAXIMUM RATINGS ( TA=25 C unless otherwise noted) RATINGS SYMBOL RS801M RS802M RS803M RS804M RS805M RS806M RS807M UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Voltage V 35 70 140 280 420 560 700 Volts RMS Maximum DC Blocking Voltage V 50 100 200 400 600 800 1000 Volts DC Maximum Average Forward Rectified Current I Amps o O 8.0 at T = 75 C (with heat sink) C Peak Forward Surge Current 8.3 ms single half sine-wave I Amps FSM 200 superimposed on rated load (JEDEC method) 2 2 Current Squarad Time I T 165.9 A /Sec RMS isolation voltage from case to lead Viso 2000 Vac R q JC 3.4 0 Typical Thermal Resistance (Note 1) C/W R 26 q JA 0 Operating and Storage Temperature Range T , T -55 to + 150 C J STG O ELECTRICAL CHARACTERISTICS ( T =25 C unless otherwise noted) A CHARACTERISTICS SYMBOL RS801M RS802M RS803M RS804M RS805M RS806M RS807M UNITS Maximum Instantaneous Forward Voltage at 8.0A DC V 1.2 Volts F o T = 25 C Maximum DC Reverse Current A 5.0 I R uAmps o at Rated DC Blocking Voltage T = 125 C A 500 NOTES : 1. Thermal Resistance : Heat-sink case mounted or if PCB mounted. 2010-01 2.Fully ROHS complian,100% Sn plating (Pb-free. REV:A .165 (4.2) .197 (5.0) .150 (3.8) .708 (18.0) .800 (20.3) .669 (17.0) .775 (19.7) .441 (11.2) .425 (10.8) f138 (3.5) .126 (3.2)RATING AND CHARACTERISTICS CURVES ( RS801M THRU RS807M ) 30 28 20 sine wave O 24 T = 150 C J 10 O T = 150 C (TYP) C 20 5 O T = 25 C (TYP) 16 C 2 12 1 0.5 8 4 0.2 Pulse test per one diode 0 0 0 2 4 6 8 10 12 14 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE, (V) AVERAGE RECTIFIED FORWARD CURRENT, (A) FIG.1 TYPICAL INSTANTANEOUS FORWARD FIG.2 POWER DISSIPATION CHARACTERITICS 4 300 on glass-epoxi substrate sine wave 0 3 8.3ms 8.3ms P.C.B 200 1 cycle soldering land 5mmf non-repetitive sine wave Tj=25 R-load 2 free in air 100 1 0 0 0 1 2 5 10 20 50 100 0 40 80 120 160 O NUMBER OF CYCLE AMBIENT TEMPERATURE, ( C) FIG.4 TYPICAL FORWARD CURRENT FIG.3 SURGE FORWARD CURRENT CAPABILITY DERATING CURVE 10 8 6 heatsink Tc Tc 4 sine wave 2 R-load on heatsink 0 10 30 50 70 90 110 130 150 170 O HEAT SINK TEMPERATURE, ( C) FIG.5 TYPICAL FORWARD CURRENT DERATING CURVE PEAK FORWARD SURGE CURRENT, (A) INSTANTANEOUS FORWARD CURRENT, (A) AVERAGE FORWARD CURRENT, (A) IFSM AVERAGE FORWARD CURRENT, (A) POWER DISSIPATION, (W)