SR860 Rectron

ISR820 RECTRON SEMICONDUCTOR THRU TECHNICAL SPECIFICATION ISR860 SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 8.0 Amperes FEATURES * Low switching noise * Low forward voltage drop * Low thermal resistance * High current capability * High surge capabitity ITO-220A * High reliability .185(4.7) MECHANICAL DATA ( ) .138(3.5) .169 4.3 * Case: ITo-220A molded plastic .406(10.3) .114(2.9) .122(3.1) ( ) ( ) .134 3.4 .382 9.7 * Epoxy: Device has UL flammability classification 94V-O .098(2.5) .110(2.8) * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 2.24 grams .602(15.3) .579(14.7) .04MAX. (1.0) .154 (3.9) .114(2.9) .071(1.8) .138 (3.5) .098(2.5) .055(1.4) ( ) .531 13.5 .055(1.4) .492(12.5) .039(1.0) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .035(0.9) o Ratings at 25 C ambient temperature unless otherwise specified020(0.5) Single phase, half wave, 60 Hz, resistive or inductive load031(0.8) (2.75) .108 .016 (0.4) For capacitive load, derate current by 20%. ( ) .091 2.30 Dimensions in inches and (millimeters) o MAXIMUM RATINGS (At TA = 25 C unless otherwise noted) RATINGS SYMBOL ISR820 ISR830 ISR835 ISR840 ISR845 ISR850 ISR860 UNITS Maximum Recurrent Peak Reverse Voltage VRRM 20 30 35 40 45 50 60 Volts Maximum RMS Voltage VRMS 14 21 25 28 32 35 42 Volts VDC 20 30 35 40 45 50 60 Volts Maximum DC Blocking Voltage Maximum Average Forward Rectified Current IO 8.0 Amps at Derating Case Temperature Peak Forward Surge Current 8.3 ms single half sine-wave IFSM 150 Amps superimposed on rated load (JEDEC method) 0 Typical Thermal Resistance (Note 1) R JC 2.5 C/W Typical Junction Capacitance (Note 3) CJ 700 450 pF 0 -55 to + 150 Operating Temperature Range TJ C 0 Storage Temperature Range TSTG -55 to + 150 C o ELECTRICAL CHARACTERISTICS (At TA = 25 C unless otherwise noted) CHARACTERISTICS SYMBOL ISR820 ISR830 ISR835 ISR840 ISR845 ISR850 ISR860 UNITS Maximum Instantaneous Forward Voltage at 8.0A DC VF .65 .75 Volts o Maximum Average Reverse Current TC = 25 C 5.0 mAmps IR o at Rated DC Blocking Voltage TC = 100 C 50 mAmps NOTES : 1. Thermal Resistance Junction to Case. 2002-11 2. Suffix R for Reverse Polarity. 2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.ISR850~ISR860 ISR820~ISR845 ( ) RATING AND CHARACTERISTIC CURVES ISR820 THRU ISR860 FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE FIG. 2 - TYPICAL REVERSE CHARACTERISTICS 10 10 T = 150 C 8 6 T = 125 C 1.0 4 Single Phase Half Wave 60Hz Inductive or 2 Resistive Load T = 75 C .1 0 0 50 100 150 T = 25 C CASE TEMPERATURE, ( ) FIG. 3 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT .01 155 8.3ms Single Half Sine-Wave (JEDED Method) 150 ISR820~ISR845 ISR850~ISR860 145 .001 0 20 40 60 80 100 120 140 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) 135 130 125 1 2 5 10 20 50 100 NUMBER OF CYCLES AT 60Hz FIG. 5 - TYPICAL INSTANTANEOUS FIG. 4 - TYPICAL JUNCTION CAPACITANCE FORWARD CHARACTERISTICS 4000 50 2000 ISR820~ISR845 ISR820~ISR845 10 1000 800 600 ISR850~ISR860 400 1.0 ISR850~ISR860 200 T = 25 J Pulse Width=300uS 1% Duty Cycle 0.1 100 .1 .4 1.0 4 10 40 80 100 .1 .2 .3 .4 .5 .6 .7 .8 .9 1.0 REVERSE VOLTAGE, ( V ) INSTANTANEOUS FORWARD VOLTAGE, (V) RECTRON JUNCTION CAPACITANCE, (pF) PEAK FORWARD SURGE CURRENT, (A) AVERAGE FORWARD CURRENT, (A) INSTANTANEOUS FORWARD CURRENT, (A) INSTANTANEOUS REVERSE CURRENT, (mA)