333 3 SS10P3C, SS10P4C www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount Schottky Barrier Rectifiers FEATURES eSMP Series Available Very low profile - typical height of 1.1 mm Ideal for automated placement K Low forward voltage drop, low power losses High efficiency Low thermal resistance 1 Meets MSL level 1, per J-STD-020 2 AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 SMPC (TO-277A) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 K Anode 1 Cathode Anode 2 TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling diodes, DC/DC converters, and polarity protection LINKS TO ADDITIONAL RESOURCES application. 3D Models MECHANICAL DATA Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating PRIMARY CHARACTERISTICS Base P/N-M3 - halogen-free, RoHS-compliant, and I 2 x 5.0 A F(AV) commercial grade V 30 V, 40 V Base P/NHM3 X - halogen-free, RoHS-compliant and RRM AEC-Q101 qualified I 200 A FSM ( X denotes revision code e.g. A, B,.....) E 20 mJ AS Terminals: matte tin plated leads, solderable per V at I = 5 A 0.37 V F F J-STD-002 and JESD 22-B102 T max. 150 C J M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix Package SMPC (TO-277A) meets JESD 201 class 2 whisker test Circuit configuration Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SS10P3C SS10P4C UNIT Device marking code S103C S104C Maximum repetitive peak reverse voltage V 30 40 V RRM total device 10 A Maximum average forward rectified current (fig. 1) I F(AV) per diode 5.0 Peak forward surge current 10 ms single half sine-wave superimposed I 200 A FSM on rated load Non-repetitive avalanche energy at 25 C, I = 2 A per diode E 20 mJ AS AS Operating junction and storage temperature range T , T -55 to +150 C J STG Revision: 24-Apr-2020 Document Number: 89035 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D SS10P3C, SS10P4C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 2.5 A 0.40 - F T = 25 C A I = 5.0 A 0.45 0.53 F Instantaneous forward voltage (1) V V F per diode I = 2.5 A 0.29 - F T = 125 C A I = 5.0 A 0.37 0.44 F T = 25 C 56 550 A A (2) Reverse current per diode Rated V I R R T = 125 C 28 45 mA A Typical junction capacitance per diode 4.0 V, 1 MHz C 430 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise specified) A PARAMETER SYMBOL SS10P3C SS10P4C UNIT (1) R 60 JA Typical thermal resistance per diode C/W R 3 JL Note (1) Units mounted on recommended PCB 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE SS10P4C-M3/86A 0.10 86A 1500 7 diameter plastic tape and reel SS10P4C-M3/87A 0.10 87A 6500 13 diameter plastic tape and reel (1) SS10P4CHM3 A/H 0.10 H 1500 7 diameter plastic tape and reel (1) SS10P4CHM3 A/I 0.10 I 6500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 24-Apr-2020 Document Number: 89035 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000