X-On Electronics has gained recognition as a prominent supplier of 2SK2788VYTR-E MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2SK2788VYTR-E MOSFETs are a product manufactured by Renesas. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2SK2788VYTR-E Renesas

2SK2788VYTR-E electronic component of Renesas
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Part No.2SK2788VYTR-E
Manufacturer: Renesas
Category: MOSFETs
Description: Trans MOSFET N-CH 60V 2A 4-Pin(3+Tab) UPAK T/R
Datasheet: 2SK2788VYTR-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
24: USD 1.3376 ea
Line Total: USD 32.1 
Availability - 0
MOQ: 24  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 24
Multiples : 1
24 : USD 1.3376
50 : USD 0.8912
100 : USD 0.7288
200 : USD 0.7039
500 : USD 0.6164

   
Manufacturer
Product Category
RoHS - XON
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SK2788VYTR-E from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SK2788VYTR-E and other electronic components in the MOSFETs category and beyond.

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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Trans MOSFET N-CH 60V 10A 3-Pin(2+Tab) DPAK(S) T/R
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Trans MOSFET N-CH 60V 10A 3-Pin(3+Tab) TO-220AB Box
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Preliminary Datasheet 2SK2788 R07DS0511EJ0300 (Previous: REJ03G1033-0200) Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jul 27, 2011 Features Low on-resistance R = 0.12 typ (V = 10 V, I = 1 A) DS(on) GS D Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK) D 1 1. Gate 2 3 2. Drain G 3. Source 4 4. Drain S Note: Marking is VY Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 60 V DSS Gate to source voltage V 20 V GSS Drain current I 2 A D 1 Drain peak current I * 4 A D(pulse) Body to drain diode reverse drain current I 2 A DR 2 Channel dissipation Pch* 1 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 100 s, duty cycle 10 % 2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm) R07DS0511EJ0300 Rev.3.00 Page 1 of 6 Jul 27, 2011 2SK2788 Preliminary Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V 60 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source breakdown voltage V 20 V I = 100 A, V = 0 (BR)GSS G DS Zero gate voltage drain current I 10 A V = 60 V, V = 0 DSS DS GS Gate to source leak current I 10 A V = 16 V, V = 0 GSS GS DS Gate to source cutoff voltage V 1.0 2.0 V I = 1 mA, V = 10 V GS(off) D DS 3 Static drain to source on state R 0.12 0.16 I = 1 A, V = 10 V* DS(on) D GS 3 resistance R 0.16 0.25 I = 1 A, V = 4 V* DS(on) D GS 3 Forward transfer admittance y 1.6 2.8 S I = 1 A, V = 10 V* fs D DS Input capacitance Ciss 180 pF V = 10 V, V = 0, DS GS f = 1 MHz Output capacitance Coss 90 pF Reverse transfer capacitance Crss 30 pF Turn-on delay time t 9 ns V = 10 V, I = 1 A, d(on) GS D R = 30 L Rise time t 15 ns r Turn-off delay time t 40 ns d(off) Fall time t 35 ns f Body to drain diode forward voltage V 0.9 V I = 2 A, V = 0 DF D GS Body to drain diode reverse t 35 ns I = 2 A, V = 0 rr F GS recovery time di / dt = 50A/s F Notes: 3. Pulse test R07DS0511EJ0300 Rev.3.00 Page 2 of 6 Jul 27, 2011

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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