5962-9221401MRA Renesas

IDT54/74FCT245T/AT/CT FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVER MILITARY AND INDUSTRIAL TEMPERATURE RANGES FAST CMOS OCTAL IDT54/74FCT245T/AT/CT BIDIRECTIONAL TRANSCEIVER FEATURES: DESCRIPTION: Std., A, and C grades The IDT octal bidirectional transceivers are built using an advanced dual Low input and output leakage 1A (max.) metal CMOS technology. The FCT245T is designed for asynchronous two- CMOS power levels way communication between data buses. The transmit/receive (T/R) input True TTL input and output compatibility: determines the direction of data flow through the bidirectional transceiver. VOH = 3.3V (typ.) Transmit (active high) enables data from A ports to B ports, and receive VOL = 0.3V (typ.) (active low) from B ports to A ports. The output enable (OE) input, when High Drive outputs (-15mA IOH, 64mA IOL) high, disables both A and B ports by placing them in high Z condition. Meets or exceeds JEDEC standard 18 specifications Military product compliant to MIL-STD-883, Class B and DESC listed (dual marked) Power off disable outputs permitlive insertio Available in the following packages: Industrial: SOIC, SSOP, QSOP, TSSOP Military: CERDIP, LCC FUNCTIONAL BLOCK DIAGRAM T/R OE 0 A B0 1 A B1 A2 2 B A3 B3 A4 4 B A5 5 B 6 A B6 7 A B7 IDT and the IDT logo are registered trademarks of Integrated Device Technology, Inc. MILITARY AND INDUSTRIAL TEMPERATURE RANGES DECEMBER 2016 1 DSC-5510/7IDT54/74FCT245T/AT/CT FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVER MILITARY AND INDUSTRIAL TEMPERATURE RANGES PIN CONFIGURATION 20 VCC INDEX T/R 1 19 A0 2 OE 3 2 20 19 A1 18 3 B0 1 4 18 A2 B0 A2 4 17 B1 5 17 A3 B1 A3 16 B2 5 6 16 A4 B2 A4 15 B3 6 7 15 A5 B3 A5 14 B4 7 A6 8 14 B4 9 10 11 12 13 B5 A6 8 13 A7 12 B6 9 B7 11 GND 10 CERDIP/ SOIC/ SSOP/ QSOP/ TSSOP LCC TOP VIEW TOP VIEW (1) ABSOLUTE MAXIMUM RATINGS PIN DESCRIPTION Symbol Description Max Unit Pin Names Description (2) VTERM Terminal Voltage with Respect to GND 0.5 to +7 V OE Output Enable Inputs (Active LOW) (3) VTERM Terminal Voltage with Respect to GND 0.5 to VCC+0.5 V T/R Transmit/Recieve Input TSTG Storage Temperature 65 to +150 C A0 - A7 Side A Inputs or 3-State Outputs IOUT DC Output Current 60 to +120 mA B0 - B7 Side B Inputs or 3-State Outputs NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational (1) sections of this specification is not implied. Exposure to absolute maximum rating FUNCTION TABLE conditions for extended periods may affect reliability. No terminal voltage may exceed Inputs Vcc by +0.5V unless otherwise noted. 2. Inputs and Vcc terminals only. OE T/R Outputs 3. Output and I/O terminals only. L L Bus B Data to Bus A L H Bus A Data to Bus B H X High Z State CAPACITANCE (TA = +25C, F = 1.0MHz) NOTE: 1. H = HIGH Voltage Level (1) Symbol Parameter Conditions Typ. Max. Unit X = Dont Care CIN Input Capacitance VIN = 0V 6 10 pF L = LOW Voltage Level Z = High Impedance COUT Output Capacitance VOUT = 0V 8 12 pF NOTE: 1. This parameter is measured at characterization but not tested. 2 A7 A1 A0 GND T/R B7 B6 VCC B5 OE