X-On Electronics has gained recognition as a prominent supplier of 70V639S12BCI SRAM across the USA, India, Europe, Australia, and various other global locations. 70V639S12BCI SRAM are a product manufactured by Renesas. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

70V639S12BCI Renesas

70V639S12BCI electronic component of Renesas
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Part No.70V639S12BCI
Manufacturer: Renesas
Category: SRAM
Description: IDT SRAM 128Kx18 STD-PWR 3.3V DUAL-PORT RAM
Datasheet: 70V639S12BCI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
24: USD 214.7738 ea
Line Total: USD 5154.57 
Availability - 0
MOQ: 24  Multiples: 24
Pack Size: 24
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0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 24
Multiples : 24
24 : USD 214.7738

   
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We are delighted to provide the 70V639S12BCI from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 70V639S12BCI and other electronic components in the SRAM category and beyond.

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HIGH-SPEED 3.3V IDT70V639S 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 2018 Features True Dual-Port memory cells which allow simultaneous Fully asynchronous operation from either port access of the same memory location Separate byte controls for multiplexed bus and bus High-speed access matching compatibility Commercial: 10/12/15ns (max.) Supports JTAG features compliant to IEEE 1149.1 Industrial: 12/15ns (max.) Due to limited pin count, JTAG is not supported on the Dual chip enables allow for depth expansion without 128-pin TQFP package. external logic LVTTL-compatible, single 3.3V (150mV) power supply for IDT70V639 easily expands data bus width to 36 bits or core more using the Master/Slave select when cascading more LVTTL-compatible, selectable 3.3V (150mV)/2.5V (100mV) than one device power supply for I/Os and control signals on each port M/S = VIH for BUSY output flag on Master, Available in a 128-pin Thin Quad Flatpack, 208-ball fine M/S = VIL for BUSY input on Slave pitch Ball Grid Array, and 256-ball Ball Grid Array Busy and Interrupt Flags Industrial temperature range (40C to +85C) is available On-chip port arbitration logic for selected speeds Full on-chip hardware support of semaphore signaling Green parts available, see ordering information between ports Functional Block Diagram UBL UBR LBL LBR R/WL R/WR B B B B E E E E 0 1 1 0 CE0L CE0R L L R R CE1L CE1R OEL OER Dout0-8 L Dout0-8 R Dout9-17 L Dout9-17 R 128K x 18 MEMORY ARRAY Din L I/O0L-I/O17L Din R I/O0R - I/O17R A16R A16L Address Address ADDR L ADDR R Decoder Decoder A0R A0L OEL ARBITRATION OER INTERRUPT CE0R CE0L SEMAPHORE CE1R CE1L LOGIC R/WL R/WR BUSYL BUSYR SEML M/S SEMR INTL INTR TMS TDI JTAG TCK TDO TRST 5621 drw 01 NOTES: 1. BUSY is an input as a Slave (M/S=VIL) and an output when it is a Master (M/S=VIH). 2. BUSY and INT are non-tri-state totem-pole outputs (push-pull). JUNE 2018 1 2018 Integrated Device Technology, Inc. DSC-5621/8IDT70V639S High-Speed 3.3V 128K x 18 Asynchronous Dual-Port Static RAM Industrial and Commercial Temperature Ranges Description The IDT70V639 is a high-speed 128K x 18 Asynchronous Dual-Port address, and I/O pins that permit independent, asynchronous access for Static RAM. The IDT70V639 is designed to be used as a stand-alone reads or writes to any location in memory. An automatic power down 2304K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual- feature controlled by the chip enables (either CE0 or CE1) permit the Port RAM for 36-bit-or-more word system. Using the IDT MASTER/ on-chip circuitry of each port to enter a very low standby power mode. SLAVE Dual-Port RAM approach in 36-bit or wider memory system The 70V639 can support an operating voltage of either 3.3V or 2.5V applications results in full-speed, error-free operation without the need for on one or both ports, controlled by the OPT pins. The power supply for additional discrete logic. the core of the device (VDD) remains at 3.3V. This device provides two independent ports with separate control, (1,2,3,4) Pin Configurations 1 2 3 4 5 6 7 8 9 11 12 13 14 10 15 16 17 I/O9L NC VSS A16L A12L A8L NC VDD A0L VSS A TDO NC SEML INTL A4L OPTL NC A NC VSS NC A9L VSS A5L TDI NC A13L NC CE0L A1L VSS VDDQR I/O8L NC B BUSYL B A10L VDDQL I/O9R VDDQR VDD NC A14L CE1L VSS A6L A2L VDD I/O8R NC VSS C UBL R/WL C NC VSS I/O10L NC A15L A11L A7L VDD NC VDD NC VDDQL I/O7L I/O7R LBL OEL A3L D D I/O11L NC VDDQR I/O10R I/O6L NC VSS NC E E VDDQL VSS I/O11R NC VSS I/O6R NC VDDQR F F NC VSS I/O12L NC NC VDDQL I/O5L NC G G 70V639BF VDD NC VDDQR I/O12R VDD NC VSS I/O5R H H (5) BF208 VDDQL VDD VSS VDD VSS VSS VSS VDDQR J J 208-Ball BGA (6) VDDQL Top View I/O3R I/O4R VSS I/O14R VSS I/O13R VSS K K NC I/O14L VDDQR I/O13L I/O3L NC VSS I/O4L L L VDDQL NC I/O15R VSS SS V NC I/O2R VDDQR M M NC VSS NC I/O15L I/O1R VDDQL NC I/O2L N N I/O16R I/O16L VDDQR VDD INTR A4R NC I/O1L NC NC TRST A16R A12R A8R NC VSS P SEMR P VSS A5R A1R VSS VDDQL I/O0R VDDQR TCK NC A13R A9R NC CE0R R VSS NC I/O17R BUSYR R VSS A14R A10R VSS A6R A2R VSS NC NC NC I/O17L VDDQL TMS NC UBR CE1R R/WR T T VDD A3R A0R VDD OPTR NC I/O0L VSS VDD A11R A7R M/S NC NC A15R LBR OER U U 5621 tbl 02b NOTES: 1. All VDD pins must be connected to 3.3V power supply. 2. All VDDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VIH (3.3V) and 2.5V if OPT pin for that port is IL (0V). set to V 3. All VSS pins must be connected to ground. 4. Package body is approximately 15mm x 15mm x 1.4mm with 0.8mm ball pitch. 5. This package code is used to reference the package diagram. 6. This text does not indicate orientation of the actual part-marking. 2

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY
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