CMOS Static RAM 71024S 1 Meg (128K x 8-Bit) Features Description 128K x 8 advanced high-speed CMOS static RAM The IDT71024 is a 1,048,576-bit high-speed static RAM organized as Commercial (0C to +70C), Industrial (40C to +85C) 128K x 8. It is fabricated using high-performance, high-reliability CMOS Equal access and cycle times technology. This state-of-the-art technology, combined with innovative Commercial and Industrial: 12/15/20ns circuit design techniques, provides a cost-effective solution for high-speed Two Chip Selects plus one Output Enable pin memory needs. Bidirectional inputs and outputs directly The IDT71024 has an output enable pin which operates as fast TTL-compatible as 6ns, with address access times as fast as 12ns available. All Low power consumption via chip deselect bidirectional inputs and outputs of the IDT71024 are TTL-compat- Available in 300 and 400 mil Plastic SOJ. ible, and operation is from a single 5V supply. Fully static asynchro- Industrial temperature range (40C to +85C) is available nous circuitry is used no clocks or refreshes are required for for selected speeds operation. Green parts available, see ordering information The IDT71024 is packaged in 32-pin 300 mil Plastic SOJ and 32- pin 400 mil Plastic SOJ. Functional Block Diagram 1 Mar. 30.2171024 CMOS Static RAM 1 Meg (128K x 8-Bit) Commercial and Industrial Temperature Ranges (1) (1) Pin Configuration Absolute Maximum Ratings Symbol Rating Value Unit NC 1 32 VCC (2) VTERM Terminal Voltage with Respect to GND 0.5 to +7.0 V A16 2 31 A15 A14 3 30 CS2 o TBIAS Temperature Under Bias 55 to +125 C WE A12 4 29 o TSTG Storage Temperature 55 to +125 C A7 5 28 A13 71024 A6 6 27 A8 PT Power Dissipation 1.25 W PJG32 A5 7 26 A9 PBG32 IOUT DC Output Current 50 mA A4 8 25 A11 2964 tbl 02 OE A3 9 24 NOTES: A2 10 23 A10 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause CS1 A1 11 22 permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational A0 12 21 I/O7 sections of this specification is not implied. Exposure to absolute maximum rating I/O0 13 20 I/O6 conditions for extended periods may affect reliability. I/O1 14 19 I/O5 2. VTERM must not exceed VCC + 0.5V. I/O2 15 18 I/O4 GND 16 17 I/O3 2964 drw 02 SOJ Top View Capacitance (TA = +25C, f = 1.0MHz, SOJ package) NOTE: (1) Symbol Parameter Conditions Max. Unit 1. This text does not indicate orientation of actual part-marking. CIN Input Capacitance VIN = 3dV 7 pF CI/O I/O Capacitance VOUT = 3dV 8 pF (1,3) Truth Table 2964 tbl 03 NOTE: Inputs 1. This parameter is guaranteed by device characterization, but is not production tested. I/O Function WE CS1 CS2 OE X H X X High-Z Deselected Standby (ISB) (2) XVHC X X High-Z Deselected Standby (ISB1) Recommended DC Operating Conditions X X L X High-Z Deselected Standby (ISB) Symbol Parameter Min. Typ. Max. Unit (2) XX VLC X High-Z Deselected Standby (ISB1) VCC Supply Voltage 4.5 5.0 5.5 V H L H H High-Z Outputs Disabled GNDGround 000 V HL HL DATAOUT Read Data VIH Input High Voltage 2.2 VCC+0.5 V LL H X DATAIN Write Data (1) VIL Input Low Voltage 0.5 0.8 V 2964 tbl 01 NOTES: 2964 tbl 04 NOTE: 1. H = VIH, L = VIL, X = Don t care. 1. VIL (min.) = 1.5V for pulse width less than 10ns, once per cycle. 2. VLC = 0.2V, VHC = VCC 0.2V. 3. Other inputs VHC or VLC. Recommended Operating Temperature and Supply Voltage Grade Temperature GND VCC Commercial 0C to +70C 0V 5.0V 0.5V Industrial 40C to +85C 0V 5.0V 0.5V 2964 tbl 05 6.422 Mar.30.21