X-On Electronics has gained recognition as a prominent supplier of 71V256SA12YG SRAM across the USA, India, Europe, Australia, and various other global locations. 71V256SA12YG SRAM are a product manufactured by Renesas. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

71V256SA12YG Renesas

71V256SA12YG electronic component of Renesas
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Part No.71V256SA12YG
Manufacturer: Renesas
Category: SRAM
Description: SRAM 32Kx8 ASYNCHRONOUS 3.3V STATIC RAM
Datasheet: 71V256SA12YG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 6
Multiples : 1
6 : USD 5.2112
20 : USD 4.7375
300 : USD 1.925
900 : USD 1.85
3000 : USD 1.7875
8000 : USD 1.7
N/A

Obsolete
0
MOQ : 27
Multiples : 1
27 : USD 1.2865
30 : USD 1.2302
60 : USD 1.219
140 : USD 1.0849
270 : USD 1.0769
1400 : USD 1.0106
2700 : USD 1.0054
N/A

Obsolete
0
MOQ : 204
Multiples : 204
204 : USD 1.7714
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 4.0907
10 : USD 1.5535
108 : USD 1.2842
513 : USD 1.2635
1026 : USD 1.2117
2511 : USD 1.1392
5022 : USD 1.1184
10017 : USD 1.0978
25002 : USD 1.0874
N/A

Obsolete
   
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We are delighted to provide the 71V256SA12YG from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 71V256SA12YG and other electronic components in the SRAM category and beyond.

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SRAM 32Kx8 ASYNCHRONOUS 3.3V STATIC RAM
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Image Part-Description
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Lower Power 71V256SA 3.3V CMOS Fast SRAM 256K (32K x 8-Bit) Features Description Ideal for high-performance processor secondary cache The IDT71V256SA is a 262,144-bit high-speed static RAM organized Commercial (0C to +70C) and Industrial (40C to +85C) as 32K x 8. It is fabricated using a high-performance, high-reliability CMOS temperature range options technology. Fast access times: The IDT71V256SA has outstanding low power characteristics while Commercial and Industrial: 12/15/20ns at the same time maintaining very high performance. Address access Low standby current (maximum): times of as fast as 12ns are ideal for 3.3V secondary cache in 3.3V 2mA full standby desktop designs. Small packages for space-efficient layouts: When power management logic puts the IDT71V256SA in standby 28-pin 300 mil SOJ mode, its very low power characteristics contribute to extended battery life. 28-pin TSOP Type I By taking CS HIGH, the SRAM will automatically go to a low power standby Produced with advanced high-performance CMOS mode and will remain in standby as long as CS remains HIGH. Further- technology more, under full standby mode (CS at CMOS level, f=0), power consump- Inputs and outputs are LVTTL-compatible tion is guaranteed to always be less than 6.6mW and typically will be much Single 3.3V(0.3V) power supply smaller. Industrial temperature range (40C to +85C) is available The IDT71V256SA is packaged in a 28-pin 300 mil SOJ and a 28-pin for selected speeds 300 mil TSOP Type I. Green parts available, see ordering information Functional Block Diagram A0 VCC GND 262,144 BIT ADDRESS MEMORY ARRAY DECODER A14 I/O0 I/O CONTROL INPUT DATA CIRCUIT I/O7 , CS CONTROL OE CIRCUIT 3101 drw 01 WE 1 Jun.02.2071V256SA 3.3V CMOS Static RAM 256K (32K x 8-Bit) Commercial and Industrial Temperature Ranges (1) (1) Pin Configurations Truth Table WE CS OE I/O Function A14 1 28 VCC X H X High-Z Standby (ISB) 27 A12 2 WE A 7 3 26 A13 XVHC X High-Z Standby (ISB1) 4 25 A 6 A 8 A 5 5 24 A 9 H L H High-Z Output Disable 71V256SA 6 23 A 4 A11 PJ G28 HL L DOUT Read A 3 7 22 OE 8 21 A10 A 2 LL X DIN Write 9 20 CS A 1 10 19 A 0 I/O7 3101 tbl 02 NOTE: I/O0 11 18 I/O6 1. H = VIH, L = VIL, X = Dont Care I/O1 12 17 I/O5 16 I/O2 13 I/O4 (1) Absolute Maximum Ratings 14 15 GND I/O3 Symbol Rating Com l Unit 3101 drw 02 VCC Supply Voltage -0.5 to +4.6 V DIP/SOJ Relative to GND Top View (2) VTERM Terminal Voltage -0.5 to VCC+0.5 V Relative to GND o TBIAS Temperature Under Bias -55 to +125 C 22 21 A10 OE o 23 20 CS TSTG Storage Temperature -55 to +125 C A11 24 19 I/O7 A9 25 18 PT Power Dissipation 1.0 W A8 I/O6 A13 26 17 I/O5 27 16 WE I/O4 IOUT DC Output Current 50 mA 71V256SA 15 VCC 28 I/O3 PZG28 3101 tbl 03 A14 1 14 GND 2 13 A12 I/O2 NOTES: A7 3 12 I/O1 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS 11 A6 4 I/O0 may cause permanent damage to the device. This is a stress rating only and A5 5 10 A0 functional operation of the device at these or any other conditions above those 6 9 A4 A1 indicated in the operational sections of this specification is not implied. Exposure A3 7 8 A2 to absolute maximum rating conditions for extended periods may affect 3101 drw 03 reliability. 2. Input, Output, and I/O terminals 4.6V maximum. TSOP Top View NOTE: Capacitance 1. This text does not indicate orientation of actual part-marking. (TA = +25C, f = 1.0MHz, SOJ package) (1) Symbol Parameter Conditions Max. Unit CIN Input Capacitance VIN = 3dV 6 pF Pin Descriptions COUT Output Capacitance VOUT = 3dV 7 pF Name Description 3101 tbl 04 NOTE: A0 - A14 Addresses 1. This parameter is determined by device characterization, but is not production tested. I/O0 - I/O7 Data Input/Output Chip Select CS WE Write Enable Recommended Operating Output Enable OE Temperature and Supply Voltage Grade Temperature GND Vcc GND Ground O O Commercial 0 C to +70 C 0V 3.3V 0.3V VCC Power O O 3101 tbl 01 Industrial -40 C to +85 C 0V 3.3V 0.3V 3101 tbl 05 2 Jun.02.20

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY
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