X-On Electronics has gained recognition as a prominent supplier of 71V67603S166PFG SRAM across the USA, India, Europe, Australia, and various other global locations. 71V67603S166PFG SRAM are a product manufactured by Renesas. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

71V67603S166PFG Renesas

71V67603S166PFG electronic component of Renesas
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Part No.71V67603S166PFG
Manufacturer: Renesas
Category: SRAM
Description: SRAM 9M 3.3V PBSRAM SLOW PL
Datasheet: 71V67603S166PFG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 41.5679 ea
Line Total: USD 41.57 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 10
Multiples : 10
10 : USD 44.7354

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 41.5679
10 : USD 39.1932
25 : USD 36.288
50 : USD 35.3808
72 : USD 35.1365

   
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RoHS - XON
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We are delighted to provide the 71V67603S166PFG from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 71V67603S166PFG and other electronic components in the SRAM category and beyond.

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256K X 36, 512K X 18 71V67603 3.3V Synchronous SRAMs 71V67803 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect Features 256K x 36, 512K x 18 memory configurations LBO input selects interleaved or linear burst mode Supports high system speed: 3.3V core power supply 166MHz 3.5ns clock access time Power down controlled by ZZ input 150MHz 3.8ns clock access time 3.3V I/O supply (VDDQ) 133MHz 4.2ns clock access time Packaged in a JEDEC Standard 100-pin thin plastic quad Self-timed write cycle with global write control (GW), byte flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch write enable (BWE), and byte writes (BWx) ball grid array (fBGA). Functional Block Diagram LBO ADV INTERNAL Burst CEN ADDRESS Sequence 256K x 36/ CLK 2 Burst 18/19 Binary 512K x 18- Logic Counter ADSC A0* BIT Q0 CLR MEMORY A1* Q1 ADSP ARRAY 2 CLK EN A0,A1 A2A18 A0A17/18 ADDRESS 36/18 REGISTER 36/18 18/19 GW Byte 1 BWE Write Register Byte 1 Write Driver BW1 9 Byte 2 Byte 2 Write Register Write Driver BW2 9 Byte 3 Write Register Byte 3 Write Driver BW3 9 Byte 4 Byte 4 Write Register Write Driver BW4 9 OUTPUT REGISTER CE Q D CS0 Enable DATA INPUT CS1 Register REGISTER CLK EN ZZ Powerdown DQ Enable Delay Register OE OUTPUT BUFFER OE , 36/18 I/O0I/O31 I/OP1I/OP4 5301 drw 01 1 Sep.13.2171V67603, 71V67803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with 3.3V I/O, Pipelined Outputs, Single Cycle Deselect Commercial and Industrial Temperature Ranges Description access sequence. The first cycle of output data will be pipelined for one The IDT71V67603/7803 are high-speed SRAMs organized as cycle before it is available on the next rising clock edge. If burst mode 256K x 36/512K x 18. The IDT71V67603/7803 SRAMs contain write, operation is selected (ADV=LOW), the subsequent three cycles of output data, address and control registers. Internal logic allows the SRAM to data will be available to the user on the next three rising clock edges. The generate a self-timed write based upon a decision which can be left until order of these three addresses are defined by the internal burst counter the end of the write cycle. and the LBO input pin. The burst mode feature offers the highest level of performance to the The IDT71V67603/7803 SRAMs utilize a high-performance CMOS pro- system designer, as the IDT71V67603/7803 can provide four cycles of cess and are packaged in a JEDEC standard 14mm x 20mm 100-pin thin plastic data for a single address presented to the SRAM. An internal burst address quad flatpack (TQFP), a 119 ball grid array (BGA) and a 165 fine pitch ball counter accepts the first cycle address from the processor, initiating the grid array (fBGA). Pin Description Summary A0-A18 Address Inputs Input Synchronous Chip Enable Input Synchronous CE CS0, CS1 Chip Selects Input Synchronous Output Enable Input Asynchronous OE Global Write Enable Input Synchronous GW Byte Write Enable Input Synchronous BWE (1) Individual Byte Write Selects Input Synchronous BW1, BW2, BW3, BW4 CLK Clock Input N/A Burst Address Advance Input Synchronous ADV ADSC Address Status (Cache Controller) Input Synchronous Address Status (Processor) Input Synchronous ADSP Linear / Interleaved Burst Order Input DC LBO ZZ Sleep Mode Input Asynchronous I/O0-I/O31, I/OP1-I/OP4 Data Input / Output I/O Synchronous VDD, VDDQ Core Power, I/O Power Supply N/A VSS Ground Supply N/A 5310 tbl 01 NOTE: 1. BW3 and BW4 are not applicable for the IDT71V67803. 6.422 Sep.13.21

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY
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