CY62146G-45ZSXAT Infineon

CY62146G MoBL Automotive 4-Mbit (256K words 16 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (256K words 16 bit) Static RAM with Error-Correcting Code (ECC) Features Functional Description AEC-Q100 qualified CY62146G is high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC. High speed: 45 ns Device is accessed by asserting the chip enable (CE) input LOW. Temperature Range Data writes are performed by asserting the Write Enable (WE) Automotive-A: -40 C to +85 C input LOW, while providing the data on I/O through I/O and 0 15 address on A through A pins. The Byte High Enable (BHE) Ultra-low standby power 0 17 and Byte Low Enable (BLE) inputs control write operations to the Typical standby current: 3.5 A upper and lower bytes of the specified memory location. BHE 1 Embedded ECC for single-bit error correction controls I/O through I/O and BLE controls I/O through I/O . 8 15 0 7 Voltage range: 2.2 V to 3.6 V, 4.5 V to 5.5 V Data reads are performed by asserting the Output Enable (OE) input and providing the required address on the address lines. 1.0-V data retention Read data is accessible on the I/O lines (I/O through I/O ). 0 15 Byte accesses can be performed by asserting the required byte TTL-compatible inputs and outputs enable signal (BHE or BLE) to read either the upper byte or the Pb-free 44-pin TSOP II package lower byte of data from the specified address location. All I/Os (I/O through I/O ) are placed in a HI-Z state when the 0 15 device is deselected (CE HIGH), or control signals are de-asserted (OE, BLE, BHE). The logic block diagram is on page 2. Product Portfolio Power Dissipation Features and Options Operating I (mA) CC Speed Product (see Pin Configuration Range V Range (V) Standby, I (A) CC SB2 (ns) f = f CY62146G on page 4) max 2 2 Typ Max Typ Max CY62146G30 Single Chip Enable Automotive-A 2.2 V3.6 V 45 15 20 3.5 8.7 CY62146G 4.5 V5.5 V Notes 1. This device does not support automatic write-back on error detection. 2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V =3V (for V range of 2.2 V3.6 V) and V =5V CC CC CC (for V range of 4.5 V5.5 V), T = 25 C. CC A Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-03594 Rev. *C Revised November 24, 2017 CY62146G MoBL Automotive Logic Block Diagram CY62146G ECCENCODER INPUTBUFFER A0 A1 A2 A3 I/O I/O MEMORY 0 7 A4 ARRAY A5 I/O I/O 8 15 A6 A7 A8 A9 COLUMNDECODER BHE WE CE OE BLE Document Number: 002-03594 Rev. *C Page 2 of 19 ROWDECODER A10 A11 A12 A13 A14 A15 A16 A17 SENSE AMPLIFIERS ECCDECODER