X-On Electronics has gained recognition as a prominent supplier of AS7C4098A-15JCN SRAM across the USA, India, Europe, Australia, and various other global locations. AS7C4098A-15JCN SRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

AS7C4098A-15JCN Alliance Memory

AS7C4098A-15JCN electronic component of Alliance Memory
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Part No.AS7C4098A-15JCN
Manufacturer: Alliance Memory
Category: SRAM
Description: SRAM 4M, 5V, 15ns, FAST 256K x 16 Asyn SRAM
Datasheet: AS7C4098A-15JCN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.457 ea
Line Total: USD 6.46 
Availability - 92
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
92
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 6.457
10 : USD 5.863
25 : USD 5.599
112 : USD 5.577
256 : USD 5.192
512 : USD 5.148
1008 : USD 5.148
5008 : USD 5.148

   
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We are delighted to provide the AS7C4098A-15JCN from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS7C4098A-15JCN and other electronic components in the SRAM category and beyond.

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AS7C4098A February 2006 5.0 V 256 K 16 CMOS SRAM Features Pin compatible with AS7C4098 Easy memory expansion with CE, OE inputs Industrial and commercial temperature TTL- and CMOS-compatible, three-state I/O Organization: 262,144 words 16 bits 44-pin JEDEC standard packages Center power and ground pins - 400-mil SOJ - TSOP 2 High speed - 10/12/15/20 ns address access time ESD protection 2000 volts - 5/6 ns output enable access time Latch-up current 200 mA Low power consumption: ACTIVE - 990mW/max 10 ns Low power consumption: STANDBY - 55mW/max CMOS Individual byte read/write controls Logic block diagram Pin arrangement for SOJ and TSOP 2 44-pin (400 mil) SOJ TSOP2 A0 V A1 CC A2 A0 1 44 A17 1024 256 16 GND A3 A1 2 43 A16 A4 A2 3 42 Array A15 A6 A3 4 41 OE (4,194,304) A7 A4 5 40 UB A8 CE 6 39 LB A12 I/O1 7 38 I/O16 A13 I/O2 8 37 I/O15 I/O3 9 36 I/O14 I/O1I/O8 I/O Control circuit I/O4 10 35 I/O13 buffer I/O9I/O16 V 11 34 GND CC GND 12 33 V CC Column decoder I/O5 13 32 I/O12 WE I/O6 14 31 I/O11 I/O7 15 30 I/O10 I/O8 16 29 I/O9 WE 17 28 NC UB A5 18 A14 27 A6 19 26 A13 OE A7 20 25 A12 LB A8 21 24 A11 A9 22 23 CE A10 Selection guide 10 12 15 20 Unit Maximum address access time 10 12 15 20 ns Maximum output enable access time 5 6 6 6 ns Maximum operating current 180 160 140 120 mA Maximum CMOS standby current 10 10 10 10 mA 2/21/06, v 1.2 Alliance Semiconductor P. 1 of 11 Copyright Alliance Semiconductor. All rights reserved. Row Decoder A5 A9 A10 A11 A14 A15 A16 A17AS7C4098A Functional description The AS7C4098A is a high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 262,144 words 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (t , t , t ) of 10/12/15/20 ns with output enable access times (t ) of 5/6 ns are ideal AA RC WC OE for high-performance applications. The chip enable input CE permits easy memory expansion with multiple-bank memory systems. When CE is high the device enters standby mode. The device is guaranteed not to exceed 55mW power consumption in CMOS standby mode. A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/ O1I/O16 is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE). A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. The chip drives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write enable is active, output drivers stay in high-impedance mode. The device provides multiple center power and ground pins, and separate byte enable controls, allowing individual bytes to be written and read. LB controls the lower bits, I/O1I/O8, and UB controls the higher bits, I/O9I/O16. All chip inputs and outputs are TTL- and CMOS-compatible, and operation is for 5.0V (AS7C4098A) supply. The device is available in the JEDEC standard 400-mL, 44-pin SOJ, TSOP 2 packages. Absolute maximum ratings Parameter Symbol Min Max Unit Voltage on V relative to GND V 0.50 +7.0 V CC t1 Voltage on any pin relative to GND V 0.50 V +0.50 V t2 CC Power dissipation P 1.5 W D Storage temperature (plastic) T 65 +150 C stg Ambient temperature with V applied T 55 +125 C CC bias DC current into outputs (low) I 20 mA OUT Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Truth table CE WE OE LB UB I/O1I/O8 I/O9I/O16 Mode HXXXX High Z High Z Standby (I , I ) SB SB1 L HHXX High Z High Z Output disable (I ) CC L XXHH LH D High Z OUT LH L HL High Z D Read (I ) OUT CC LL D D OUT OUT LH D High Z IN LL X HL High Z D IN LL D D Write (I ) IN IN CC Key: X = Dont care, L = Low, H = High. 2/21/06, v 1.2 Alliance Semiconductor P. 2 of 11

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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