X-On Electronics has gained recognition as a prominent supplier of K6T1008C2E-GB55 SRAM across the USA, India, Europe, Australia, and various other global locations. K6T1008C2E-GB55 SRAM are a product manufactured by ISSI. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

K6T1008C2E-GB55 ISSI

K6T1008C2E-GB55 electronic component of ISSI
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Part No.K6T1008C2E-GB55
Manufacturer: ISSI
Category: SRAM
Description: K6T1008C2E-GB55 SRAM SOP32
Datasheet: K6T1008C2E-GB55 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 8.1137 ea
Line Total: USD 8.11 
Availability - 0
Ship by Wed. 25 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 8.1137
25 : USD 4.0569
50 : USD 3.6512
75 : USD 3.0427
100 : USD 2.7384

   
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We are delighted to provide the K6T1008C2E-GB55 from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the K6T1008C2E-GB55 and other electronic components in the SRAM category and beyond.

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IS62C1024AL IS65C1024AL 128K x 8 LOW POWER CMOS JULY 2008 STATIC RAM FEATURES DESCRIPTION The ISSI IS62C1024AL/IS65C1024AL is a low power, High-speed access time: 35, 45 ns 131,072-word by 8-bit CMOS static RAM. It is fabricated Low active power :100 mW (typical) using high-performance CMOS technology. This highly Low standby power :20 W (typical) CMOS reliable process coupled with innovative circuit design standby techniques, yields higher performance and low power consumption devices. Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation Fully static operation: no clock or refresh can be reduced by using CMOS input levels. required TTL compatible inputs and outputs Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable Single 5V (10%) power supply (WE) controls both writing and reading of the memory. Commercial, Industrial, and Automotive tem- perature ranges available Standard Pin Configuration: 32-pin SOP/ 32-pinTSOP (Type 1) Lead free available FUNCTIONAL BLOCK DIAGRAM 128K x 8 A0-A16 DECODER MEMORY ARRAY VDD GND I/O COLUMN I/O I/O0-I/O7 DATA CIRCUIT CE1 CONTROL CE2 CIRCUIT OE WE Copyright 2006 Integrated Silicon Solution, Inc.All rights reserv ed.ISSI reserves the right to make changes to this specification and its products at any time withoutISSI noticeassumes. no liability arising out of the application or use of any information, products or services descr ibedCustomers herein. are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products . Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774 1 Rev. H 06/26/08IS62C1024AL IS65C1024AL PIN CONFIGURATION PIN CONFIGURATION 32-Pin SOP 32-Pin TSOP (Type 1) NC 1 32 VDD A11 1 32 OE A16 2 31 A15 A9 2 31 A10 A14 3 30 CE2 A8 3 30 CE1 A12 4 29 WE A13 4 29 I/O7 A7 5 28 A13 WE 5 28 I/O6 A6 6 27 A8 CE2 6 27 I/O5 26 A5 7 A9 A15 7 26 I/O4 A4 8 25 A11 VDD 8 25 I/O3 A3 9 24 OE NC 9 24 GND A2 10 23 A10 A16 10 23 I/O2 A1 11 22 CE1 A14 11 22 I/O1 A0 12 21 I/O7 21 A12 12 I/O0 I/O0 13 20 I/O6 20 A7 13 A0 I/O1 14 19 I/O5 A6 14 19 A1 I/O2 15 18 I/O4 A5 15 18 A2 17 GND 16 I/O3 A4 16 17 A3 PIN DESCRIPTIONS A0-A16 Address Inputs CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input OPERATING RANGE (IS62C1024AL) OE Output Enable Input Range Ambient Temperature Vdd WE Write Enable Input Commercial 0C to +70C 5V 10% I/O0-I/O7 Input/Output Industrial -40C to +85C 5V 10% VDD Power GND Ground OPERATING RANGE (IS65C1024AL) Range Ambient Temperature Vdd Automotive -40C to +125C 5V 10% TRUTH TABLE Mode WE CE1 CE2 OE I/O Operation Vdd Current Not Selected X H X X High-Z Isb 1, Isb 2 (Power-down) X X L X High-Z Isb 1, Isb 2 Output Disabled H L H H High-Z Icc Read H L H L Dout Icc Write L L H X DIn Icc 2 Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774 Rev. H 06/26/08

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
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