X-On Electronics has gained recognition as a prominent supplier of CY7C1021D-10ZSXIT SRAM across the USA, India, Europe, Australia, and various other global locations. CY7C1021D-10ZSXIT SRAM are a product manufactured by Infineon. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

CY7C1021D-10ZSXIT Infineon

Hot CY7C1021D-10ZSXIT electronic component of Infineon
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Part No.CY7C1021D-10ZSXIT
Manufacturer: Infineon
Category: SRAM
Description: Cypress Semiconductor SRAM 2Mb 10ns 64K x 16 Fast Async SRAM
Datasheet: CY7C1021D-10ZSXIT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 1.6198 ea
Line Total: USD 1619.8 
Availability - 970
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
511
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 2
Multiples : 1
2 : USD 3.0888
10 : USD 2.9094
25 : USD 2.8509
100 : USD 2.808
250 : USD 2.7508
500 : USD 2.5441

970
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 1.6198

1
Ship by Tue. 07 Jan to Fri. 10 Jan
MOQ : 1
Multiples : 1
1 : USD 3.9596
10 : USD 3.4518
30 : USD 3.1505
100 : USD 2.847
500 : USD 2.7058
1000 : USD 2.6429

348
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 4.422
10 : USD 3.795
100 : USD 3.597
250 : USD 3.542
500 : USD 3.267
1000 : USD 3.124
2000 : USD 3.014

970
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 9
Multiples : 1
9 : USD 4.5825
11 : USD 4.03
50 : USD 3.77
100 : USD 3.64
200 : USD 3.51
1000 : USD 3.2337

511
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 5
Multiples : 1
5 : USD 3.0888
10 : USD 2.9094
25 : USD 2.8509
100 : USD 2.808
250 : USD 2.7508
500 : USD 2.5441

970
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 1.6198

   
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We are delighted to provide the CY7C1021D-10ZSXIT from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY7C1021D-10ZSXIT and other electronic components in the SRAM category and beyond.

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CY7C1021D 1-Mbit (64 K 16) Static RAM 1-Mbit (64 K 16) Static RAM automatic power down feature that significantly reduces power Features consumption when deselected. The input and output pins (I/O 0 through I/O ) are placed in a high impedance state when the Temperature Ranges: 15 device is deselected (CE HIGH), outputs are disabled (OE Industrial: 40 C to 85 C HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during Automotive-A: 40 C to 85 C a write operation (CE LOW and WE LOW). Pin and Function Compatible with CY7C1021B Write to the device by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data High Speed from I/O pins (I/O through I/O ), is written into the location 0 7 t = 10 ns AA specified on the address pins (A through A ). If Byte High 0 15 Low Active Power Enable (BHE) is LOW, then data from I/O pins (I/O through 8 I = 80 mA at 10 ns I/O ) is written into the location specified on the address pins CC 15 (A through A ). 0 15 Low CMOS Standby Power Read from the device by taking Chip Enable (CE) and Output I = 3 mA SB2 Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If 2.0 V Data Retention Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appears on I/O to I/O . If 0 7 Automatic Power Down when Deselected Byte High Enable (BHE) is LOW, then data from memory CMOS for Optimum Speed and Power appears on I/O to I/O . See the Truth Table on page 10 for a 8 15 complete description of read and write modes. Independent Control of Upper and Lower Bits The CY7C1021D device is suitable for interfacing with Available in Pb-free 44-pin 400-Mil Wide Molded SOJ and processors that have TTL I/P levels. It is not suitable for 44-pin TSOP II Packages processors that require CMOS I/P levels. Please see Electrical Characteristics on page 4 for more details and suggested Functional Description alternatives. The CY7C1021D is a high performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an Logic Block Diagram DATA IN DRIVERS A 7 A 6 A 5 64K x 16 A 4 I/O I/O 0 7 RAM Array A 3 A I/O I/O 2 8 15 A 1 A 0 COLUMN DECODER BHE WE CE OE BLE Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 38-05462 Rev. *M Revised June 19, 2013 ROW DECODER A 8 A 9 A 10 A 11 A 12 A 13 A 14 A 15 SENSE AMPSCY7C1021D Contents Pin Configurations ...........................................................3 Ordering Information ...................................................... 11 Selection Guide ................................................................3 Ordering Code Definitions ......................................... 11 Maximum Ratings .............................................................4 Package Diagrams .......................................................... 12 Operating Range ...............................................................4 Acronyms ........................................................................14 Electrical Characteristics .................................................4 Document Conventions ................................................. 14 Capacitance ......................................................................5 Units of Measure ....................................................... 14 Thermal Resistance ..........................................................5 Document History Page ................................................. 15 AC Test Loads and Waveforms .......................................5 Sales, Solutions, and Legal Information ...................... 17 Data Retention Characteristics .......................................6 Worldwide Sales and Design Support ....................... 17 Data Retention Waveform ................................................6 Products ....................................................................17 Switching Characteristics ................................................7 PSoC Solutions ...................................................... 17 Switching Waveforms ......................................................8 Cypress Developer Community ................................. 17 Truth Table ......................................................................10 Technical Support ..................................................... 17 Document Number: 38-05462 Rev. *M Page 2 of 17

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Cypress
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CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
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Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
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SP9
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