X-On Electronics has gained recognition as a prominent supplier of AS4C32M16D1-5TCN DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C32M16D1-5TCN DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C32M16D1-5TCN Alliance Memory

AS4C32M16D1-5TCN electronic component of Alliance Memory
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Part No.AS4C32M16D1-5TCN
Manufacturer: Alliance Memory
Category: DRAM
Description: Alliance Memory DRAM 512Mb, 3.3V, 200Mhz 32M x 16 DDR
Datasheet: AS4C32M16D1-5TCN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.465 ea
Line Total: USD 3.46 
Availability - 1
Ship by Fri. 22 Nov to Tue. 26 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Fri. 22 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 3.465
10 : USD 3.179
108 : USD 2.849
216 : USD 2.827
540 : USD 2.728
1080 : USD 2.64
2592 : USD 2.508
5076 : USD 2.431
10044 : USD 2.387

   
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We are delighted to provide the AS4C32M16D1-5TCN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C32M16D1-5TCN and other electronic components in the DRAM category and beyond.

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AS4C32M16D1 32M x 16 bit DDR Synchronous DRAM (SDRAM) Alliance Memory Confidential Advanced (Rev. 1.1, July / 2011) Overview Features The 512Mb DDR AS4C32M16D1 SDRAM is a high- Fast clock rate: 200MHz speed CMOS double data rate synchronous DRAM Differential Clock CK & CK containing 512 Mbits. It is internally configured as a Bi-directional DQS quad 8M x 16 DRAM with a synchronous interface (all DLL enable/disable by EMRS signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of Fully synchronous operation CK and .d Read and write accesses to the SDRAM Internal pipeline architecture CK are burst oriented accesses start at a selected location Four internal banks, 8M x 16-bit for each bank and continue for a programmed number of locations in a Programmable Mode and Extended Mode registers programmed sequence. Accesses begin with the - CAS Latency: 2, 2.5, 3 registration of a BankActivate command which is then - Burst length: 2, 4, 8 followed by a Read or Write command. The DDR - Burst Type: Sequential & Interleaved SDRAM provides programmable Read or Write burst Individual byte-write mask control lengths of 2, 4, or 8. An auto precharge function may be DM Write Latency = 0 enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh Auto Refresh and Self Refresh functions, either Auto or Self Refresh are easy to use. In 8192 refresh cycles / 64ms addition, The DDR AS4C32M16D1 features Operating temperature range programmable DLL option. By having a programmable - Commercial (0 ~ 70C) mode register and extended mode register, the system - Industrial (-40 ~ 85C) can choose the most suitable modes to maximize its Precharge & active power down performance. These devices are well suited for Power supplies: VDD & VDDQ = 2.5V 0.2V applications requiring high memory bandwidth and high Interface: SSTL 2 I/O Interface performance. Package: 66 Pin TSOP II, 0.65mm pin pitch - Pb and Halogen free Table 1.Ordering Information Part Number Clock Data Rate Package Temperature Temp Range AS4C32M16D1-5TCN 200MHz 400Mbps/pin 66pin TSOPII Commercial 0 ~ 70C Industrial -40 ~ 85C AS4C32M16D1-5TIN 200MHz 400Mbps/pin 66pin TSOPII T: indicates TSOP II package C: indicates Commercial temp. I: indicates Industrial temp. N: indicates lead free ROHS Confidential 1 Rev.1.1 July /2011 AS4C32M16D1 Figure 1. Pin Assignment (Top View) 1 66 VDD VSS DQ0 2 65 DQ15 VDDQ 3 64 VSSQ DQ1 4 63 DQ14 DQ2 5 62 DQ13 VSSQ 6 61 VDDQ DQ3 7 60 DQ12 DQ4 8 59 DQ11 VDDQ 9 58 VSSQ 10 57 DQ5 DQ10 11 56 DQ6 DQ9 VSSQ 12 55 VDDQ DQ7 13 54 DQ8 NC 14 53 NC VDDQ 15 52 VSSQ LDQS 16 51 UDQS NC 17 50 NC VDD 18 49 VREF 19 48 NC VSS LDM 20 47 UDM WE 21 46 CK CAS 22 45 CK RAS 23 44 CKE CS 24 43 NC NC 25 42 A12 BA0 26 41 A11 BA1 27 40 A9 A10/AP 28 39 A8 29 38 A0 A7 A1 30 37 A6 A2 31 36 A5 A3 32 35 A4 VDD 33 34 VSS Confidential 2 Rev.1.1 July /2011

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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