74FCT162245CTPVG8 Renesas

IDT54/74FCT162245T/AT/CT FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVER MILITARY AND INDUSTRIAL TEMPERATURE RANGES FAST CMOS 16-BIT IDT54/74FCT162245T/AT/CT BIDIRECTIONAL TRANSCEIVER FEATURES: DESCRIPTION: 0.5 MICRON CMOS Technology The FCT162245T 16-bit transceiver is built using advanced dual metal High-speed, low-power CMOS replacement for ABT functions CMOS technology. These high-speed, low-power transceivers are ideal for Typical tSK(o) (Output Skew) < 250ps synchronous communication between two buses (A and B). The Direction and Low input and output leakage 1A (max.) Output Enable controls operate these devices as either two independent 8-bit ESD > 2000V per MIL-STD-883, Method 3015 > 200V using transceivers or one 16-bit transceiver. The direction control pin (xDIR) controls machine model (C = 200pF, R = 0) the direction of data flow. The output enable pin (xOE) overrides the direction Balanced Output Drivers: control and disables both ports. All inputs are designed with hysteresis for 24mA (industrial) improved noise margin. 16mA (military) The FCT162245T has balanced output drive with current limiting resistors. Reduced system switching noise This offers low ground bounce, minimal undershoot, and controlled output fall Typical VOLP (Output Ground Bounce) < 0.6V at VCC = 5V, timesreducing the need for external series terminating resistors. The TA = 25C FCT162245T is a plug-in replacement for the FCT16245T and ABT16245 for Available in the following packages: on-board interface applications. Industrial: SSOP, TSSOP Military: CERPACK FUNCTIONAL BLOCK DIAGRAM 1 DIR 2 DIR 1OE 2OE 1A1 2A1 1B1 2B1 1A2 2A2 1B2 2B2 1A3 2A3 1B3 2B3 1A4 2A4 1B4 2B4 1A5 2A5 1B5 2B5 1A6 2A6 1B6 2B6 1A7 2A7 1B7 2B7 1A8 2A8 1B8 2B8 The IDT logo is a registered trademark of Integrated Device Technology, Inc. MILITARY AND INDUSTRIAL TEMPERATURE RANGES SEPTEMBER 2009 1 2009 Integrated Device Technology, Inc. DSC-5457/8IDT54/74FCT162245T/AT/CT FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVER MILITARY AND INDUSTRIAL TEMPERATURE RANGES (1)(1)(1)(1)(1) PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS Symbol Description Max Unit (2) VTERM Terminal Voltage with Respect to GND 0.5 to +7 V 1 48 1DIR 1OE (3) VTERM Terminal Voltage with Respect to GND 0.5 to VCC+0.5 V TSTG Storage Temperature 65 to +150 C 2 47 1B1 1A1 IOUT DC Output Current 60 to +120 mA 3 46 1B2 1A2 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause GND 4 45 GND permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational 5 44 1B3 1A3 sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 6 43 1B4 1A4 2. All device terminals except FCT162XXXT AND FCT166XXXT (A-Port) Output and I/O terminals. VCC 7 42 VCC 3. Output and I/O terminals terminals for FCT162XXXT AND FCT166XXXT (A-Port). 8 41 1B5 1A5 CAPACITANCE (TA = +25C, F = 1.0MHz) 9 40 1B6 1A6 (1) Symbol Parameter Conditions Typ. Max. Unit GND 10 39 GND CIN Input Capacitance VIN = 0V 3.5 6 pF COUT Output Capacitance VOUT = 0V 3.5 8 pF 11 38 1B7 1A7 NOTE: 12 37 1. This parameter is measured at characterization but not tested. 1B8 1A8 13 36 2B1 2A1 PIN DESCRIPTION 14 35 2B2 2A2 Pin Names Description GND 15 34 GND xOE Output Enable Inputs (Active LOW) 16 33 xDIR Direction Control Input 2B3 2A3 xAx Side A Inputs or 3-State Outputs 17 32 2B4 2A4 xBx Side B Inputs or 3-State Outputs VCC 18 31 VCC (1) FUNCTION TABLE 19 30 2B5 2A5 Inputs 20 29 2B6 2A6 xOE xDIR Outputs GND 21 28 GND L L Bus B Data to Bus A 22 27 2B7 2A7 L H Bus A Data to Bus B 23 26 2B8 2A8 H X High Z State 24 25 2DIR 2OE NOTE: 1. H = HIGH Voltage Level L = LOW Voltage Level X = Dont Care SSOP/ TSSOP/ CERPACK Z = High-Impedance TOP VIEW 2