74FCT162373ETPVG8 Renesas

IDT74FCT162373AT/CT/ET INDUSTRIAL TEMPERATURE RANGE FAST CMOS 16-BIT TRANSPARENT LATCH FAST CMOS 16-BIT IDT74FCT162373AT/CT/ET TRANSPARENT LATCH FEATURES: DESCRIPTION: 0.5 MICRON CMOS Technology The FCT162373T 16-bit transparent D-type latch is built using advanced High-speed, low-power CMOS replacement for ABT functions dual metal CMOS technology. This high-speed, low-power latch is ideal for Typical tSK(o) (Output Skew) < 250ps temporary storage of data. It can be used for implementing memory address Low input and output leakage 1 A (max.) latches, I/O ports, and bus drivers. The Output Enable and Latch Enable controls VCC = 5V 10% are organized to operate each device as two 8-bit latches, or one 16-bit latch. Balanced Output Drivers: 24mA Flow-through organization of signal pins simplifies layout. All inputs are designed Reduced system switching noise with hysteresis for improved noise margin. Typical VOLP (Output Ground Bounce) < 0.6V at VCC = 5V, The FCT162373T has balanced output drive with current limiting resistors. TA = 25C This offers low ground bounce, minimal undershoot, and controlled output fall Available in SSOP and TSSOP packages timesreducing the need for external series terminating resistors. The FCT162373T is a plug-in replacement for the FCT16373T and ABT16373 for on-board interface applications. FUNCTIONAL BLOCK DIAGRAM 2OE 1OE 2LE 1LE D D 1D1 2D1 1O1 2O1 C C TO SEVEN OTHER CHANNELS TO SEVEN OTHER CHANNELS The IDT logo is a registered trademark of Integrated Device Technology, Inc. INDUSTRIAL TEMPERATURE RANGE MARCH 2015 1 2015 Integrated Device Technology, Inc. DSC-5455/7IDT74FCT162373AT/CT/ET INDUSTRIAL TEMPERATURE RANGE FAST CMOS 16-BIT TRANSPARENT LATCH (1)(1)(1)(1)(1) PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS Symbol Description Max Unit (2) VTERM Terminal Voltage with Respect to GND 0.5 to +7 V 1 48 1LE (3) 1OE VTERM Terminal Voltage with Respect to GND 0.5 to VCC+0.5 V 2 47 TSTG Storage Temperature 65 to +150 C 1O1 1D1 IOUT DC Output Current 60 to +120 mA 3 46 1O2 1D2 NOTES: GND 4 45 GND 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation 5 44 of the device at these or any other conditions above those indicated in the operational 1O3 1D3 sections of this specification is not implied. Exposure to absolute maximum rating 6 43 1O4 1D4 conditions for extended periods may affect reliability. 2. All device terminals except FCT162XXX Output and I/O terminals. VCC 7 42 VCC 3. Output and I/O terminals terminals for FCT162XXX. 8 41 1O5 1D5 CAPACITANCE (TA = +25C, F = 1.0MHz) 9 40 1O6 1D6 (1) Symbol Parameter Conditions Typ. Max. Unit GND 10 39 GND CIN Input Capacitance VIN = 0V 3.5 6 pF COUT Output Capacitance VOUT = 0V 3.5 8 pF 11 38 1O7 1D7 NOTE: 12 37 1O8 1D8 1. This parameter is measured at characterization but not tested. 13 36 2O1 2D1 PIN DESCRIPTION 14 35 2O2 2D2 Pin Names Description GND 15 34 GND xDx Data Inputs 16 33 2O3 2D3 xLE Latch Enable Input (Active HIGH) 17 32 xOE Outputs Enable Input (Active LOW) 2O4 2D4 x O x 3-State Outputs VCC 18 31 VCC 19 30 2O5 2D5 (1) FUNCTION TABLE 20 29 2O6 2D6 Inputs Outputs GND 21 28 GND xDx xLE xOE xOx 22 27 2O7 2D7 HH L H 23 26 2O8 2D8 LH L L 24 25 2LE XX H Z 2OE NOTE: 1. H = HIGH Voltage Level SSOP/ TSSOP X = Dont Care TOP VIEW L = LOW Voltage Level Z = High-Impedance 2