74FCT162374ETPVG Renesas

IDT74FCT162374AT/CT/ET FAST CMOS 16-BIT REGISTER (3-STATE) INDUSTRIAL TEMPERATURE RANGE FAST CMOS 16-BIT IDT74FCT162374AT/CT/ET REGISTER (3-STATE) FEATURES: DESCRIPTION: 0.5 MICRON CMOS Technology The FCT162374T 16-bit edge-triggered D-type registers are built using High-speed, low-power CMOS replacement for ABT functions advanced dual metal CMOS technology. These high-speed, low-power Typical tSK(o) (Output Skew) < 250ps registers are ideal for use as buffer registers for data synchronization and Low input and output leakage 1A (max.) storage. The Output Enable (xOE) and clock (xCLK) controls are organized to VCC = 5V 10% operate each device as two 8-bit registers or one 16-bit register with common Balanced Output Drivers: 24mA clock. Flow-through organization of signal pins simplifies layout. All inputs are Reduced system switching noise designed with hysteresis for improved noise margin. Typical VOLP (Output Ground Bounce) < 0.6V at VCC = 5V, The FCT162374T has balanced output drive with current limiting resistors. TA = 25C This offers low ground bounce, minimal undershoot, and controlled output fall Available in SSOP and TSSOP packages timesreducing the need for external series terminating resistors.The FCT162374T are plug-in replacements for the FCT16374T and ABT16374 for on-board bus interface applications. FUNCTIONAL BLOCK DIAGRAM 2OE 1OE 1CLK 2CLK 1D1 D D 2D1 1O1 2O1 C C TO SEVEN OTHER CHANNELS TO SEVEN OTHER CHANNELS The IDT logo is a registered trademark of Integrated Device Technology, Inc. INDUSTRIAL TEMPERATURE RANGE SEPTEMBER 2009 1 2009 Integrated Device Technology, Inc. DSC-5453/7IDT74FCT162374AT/CT/ET FAST CMOS 16-BIT REGISTER (3-STATE) INDUSTRIAL TEMPERATURE RANGE (1)(1) (1)(1)(1) PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS Symbol Description Max Unit (2) VTERM Terminal Voltage with Respect to GND 0.5 to 7 V 1 48 1OE 1CLK (3) VTERM Terminal Voltage with Respect to GND 0.5 to VCC+0.5 V 2 47 1O1 1D1 TSTG Storage Temperature 65 to +150 C 3 46 1O2 1D2 IOUT DC Output Current 60 to 120 mA NOTES: GND 4 45 GND 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause 5 44 permanent damage to the device. This is a stress rating only and functional operation 1O3 1D3 of the device at these or any other conditions above those indicated in the operational 6 43 sections of this specification is not implied. Exposure to absolute maximum rating 1O4 1D4 conditions for extended periods may affect reliability. VCC 7 42 VCC 2. All device terminals except FCT162XXX Output and I/O terminals. 3. Output and I/O terminals terminals for FCT162XXX. 8 41 1O5 1D5 9 40 1O6 1D6 CAPACITANCE (TA = +25C, F = 1.0MHz) (1) GND 10 39 GND Symbol Parameter Conditions Typ. Max. Unit CIN Input Capacitance VIN = 0V 3.5 6 pF 11 38 1O7 1D7 COUT Output Capacitance VOUT = 0V 3.5 8 pF 12 37 1O8 1D8 NOTE: 13 36 1. This parameter is measured at characterization but not tested. 2O1 2D1 14 35 2O2 2D2 GND 15 34 GND PIN DESCRIPTION Pin Names Description 16 33 2O3 2D3 xDx Data Inputs 17 32 2O4 2D4 xCLK Clock Inputs VCC 18 31 VCC x O x 3-State Outputs xOE 3-State Outputs Enable Input (Active LOW) 19 30 2O5 2D5 20 29 2O6 2D6 GND 21 28 GND (1) FUNCTION TABLE 22 27 2O7 2D7 Inputs Outputs 23 26 2O8 2D8 Function xDx xCLK xOE xOx 24 25 2OE 2CLK Hi-Z X L H Z XH H Z Load L LL SSOP/ TSSOP Register H LH TOP VIEW L HZ H HZ NOTE: 1. H = HIGH Voltage Level L = LOW Voltage Level X = Dont Care Z = High-Impedance = LOW-to-HIGH transition 2