Data Sheet BCR16FM-12LB R07DS1188EJ0201 600V - 16A - Triac Rev.2.01 Medium Power Use Feb. 19, 2019 Features I : 16 A Insulated Type T (RMS) V : 600 V Planar Passivation Type DRM Tj: 150 C Viso: 2000V Note5 I , I , I : 30 mA(20mA) FGTI RGTI RGT III Outline RENESAS Package code: PRSS0003AG-A RENESAS Package code: PRSS0003AP-A (Package name: TO-220FP) (Package name: TO-220FPA) Ordering code Ordering code 2 BB0 BG0 1. T Terminal BH0 1 2. T Terminal 2 3. Gate Terminal 3 1 1 1 2 2 3 3 Application Motor control, Heater control, Power supply, Solid state relay, and other general purpose AC control applications. Maximum Ratings Parameter Symbol Voltage class Unit 12 Note1 Repetitive peak off-state voltage VDRM 600 V Note1 Non-repetitive peak off-state voltage V 720 V DSM Parameter Symbol Ratings Unit Conditions RMS on-state current IT (RMS) 16 A Commercial frequency, sine full wave 360 conduction, Note2 Tc = 98 C ( BB0, BH0) Note2 Tc = 87 C ( BG0) Surge on-state current I 160 A 50 Hz sinewave 1 full cycle, peak value, TSM non-repetitive 2 2 2 I t for fusion I t 106.5 A s Value corresponding to 1 cycle of half wave 50 Hz, surge on-state current Peak gate power dissipation P 5 W GM Average gate power dissipation PG (AV) 0.5 W Peak gate voltage V 10 V GM Peak gate current IGM 2 A Junction Temperature Tj 40 to +150 C Storage temperature Tstg 40 to +150 C Note7 Isolation voltage V 2000 V Ta=25 C, AC 1 minute, iso T T G terminal to case 1 2 Notes: 1. Gate open. 2. Please refer to the Ordering Information. R07DS1188EJ0201 Rev.2.01 Page 1 of 8 Feb. 19, 2019 BCR16FM-12LB Data Sheet Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak off-state current I 2.0 mA Tj = 150 C, V applied DRM DRM On-state voltage VTM 1.5 V Tc = 25 C, ITM = 25 A, instantaneous measurement Note3 Gate trigger voltage V 1.5 V Tj = 25 C, V = 6 V, R = 6 , FGT D L R = 330 G VRGT 1.5 V V 1.5 V RGT Note3 Note6 Gate trigger curent I 30 mA Tj = 25 C, V = 6 V, R = 6 , FGT D L Note6 R = 330 G IRGT 30 mA Note6 I 30 mA RGT Gate non-trigger voltage VGD 0.2 V Tj = 125 C, VD = 1/2 VDRM 0.1 Tj = 150 C, V = 1/2 V D DRM Note4 Thermal resistance Rth (j-c) 2.9 C/W Junction to case Note2 ( BB0, BH0) Note4 3.5 C/W Junction to case Note2 ( BG0) Critical-rate of rise of off-state (dv/dt)c 10 V/ s Tj = 125 C Note5 commutation voltage 1 Tj = 150 C Notes: 3. Measurement using the gate trigger characteristics measurement circuit. 4. The contact thermal resistance R in case of greasing is 0.5 C/W. th(c-f) 5. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. 6. High sensitivity (I 20 mA) is also available. (I item:1) GT GT 7. Make sure that your finished product containing this device meets your safe isolation requirements. For safety, it s advisable that heatsink is electrically floating. Commutating voltage and current waveforms Test conditions (inductive load) 1. Junction temperature Supply Voltage Time Tj = 125C/150C (di/dt)c 2. Rate of decay of on-state commutating current Time Main Current (di/dt)c = 8 A/ms Main Voltage Time 3. Peak off-state voltage (dv/dt)c V D VD = 400 V R07DS1188EJ0201 Rev.2.01 Page 2 of 8 Feb. 19, 2019