X-On Electronics has gained recognition as a prominent supplier of BCR3AM-14B#BD0 Triacs across the USA, India, Europe, Australia, and various other global locations. BCR3AM-14B#BD0 Triacs are a product manufactured by Renesas. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

BCR3AM-14B#BD0 Renesas

BCR3AM-14B#BD0 electronic component of Renesas
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Part No. BCR3AM-14B#BD0
Manufacturer: Renesas
Category: Triacs
Description: Triacs POWER TRS1 HV-THYRISTOR TO92 BCR
Datasheet: BCR3AM-14B#BD0 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 1.716 ea
Line Total: USD 5148 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Wed. 23 Jul to Fri. 25 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 1.716
5000 : USD 1.705

   
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We are delighted to provide the BCR3AM-14B#BD0 from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCR3AM-14B#BD0 and other electronic components in the Triacs category and beyond.

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Data Sheet BCR3AM-14B R07DS1422EJ0200 (Previous: REJ03G1806-0100) 700V - 3A - Triac Rev.2.00 Low Power Use Dec. 12, 2018 Features I : 3 A (non-continuous) Tj: 150 C T (RMS) V : 800 V (Tj = 125 C) Planar Passivation Type DRM I , I , I : 30 mA FGTI RGTI RGT III Outline RENESAS Package code: PRSS0003EA-A PRSS0003DJ-A (Package name: TO-92*) (Package name: TO-92) 2 1. T Terminal 1 2. T Terminal 2 3. Gate Terminal 3 1 1 1 3 3 2 2 Application Non-continuous Motor control and other general purpose non-continuous AC control applications. Maximum Ratings Parameter Symbol Voltage class Unit Conditions 14 Note1 Repetitive peak off-state voltage VDRM 800 V Tj=125 C 700 V Tj=150 C Note1 Non-repetitive peak off-state voltage VDSM 840 V Notes: 1. Gate open. Parameter Symbol Ratings Unit Conditions RMS on-state current I 3 A Commercial frequency, sine full wave T (RMS) 360 conduction, non-continuous Surge on-state current ITSM 30 A 60 Hz sinewave 1 full cycle, peak value, non-repetitive 2 2 2 I t for fusing I t 3.7 A s Value corresponding to 1 cycle of half wave 60 Hz, surge on-state current Peak gate power dissipation PGM 3 W Average gate power dissipation P 0.3 W G (AV) Peak gate voltage VGM 6 V Peak gate current I 0.5 A GM Junction Temperature Tj 40 to +150 C Storage temperature Tstg 40 to +150 C R07DS1422EJ0200 Rev.2.00 Page 1 of 8 Dec. 12, 2018 BCR3AM-14B Data Sheet Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak off-state current I 2.0 mA Tj = 150 C, V applied DRM DRM On-state voltage VTM 1.6 V Tc = 25 C, ITM = 4.5 A, instantaneous measurement Note2 Gate trigger voltage V 1.5 V Tj = 25 C, V = 6 V, R = 6 , FGT D L R = 330 G VRGT 1.5 V V 1.5 V RGT Note2 Gate trigger current I 30 mA Tj = 25 C, V = 6 V, R = 6 , FGT D L R = 330 G IRGT 30 mA I 30 mA RGT Gate non-trigger voltage VGD 0.2 V Tj = 125 C, VD = 1/2 VDRM 0.1 Tj = 150 C, V = 1/2 V D DRM Note3 Thermal resistance Rth (j-c) 50 C/W Junction to case Critical-rate of rise of off-state (dv/dt)c 5 V/ s Tj = 125 C Note4 commutating voltage 1 Tj = 150 C Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms Test conditions (inductive load) 1. Junction temperature Time Supply Voltage Tj = 125C/150C (di/dt)c 2. Rate of decay of on-state commutating current Time Main Current (di/dt)c = 1.5 A/ms Time Main Voltage 3. Peak off-state voltage (dv/dt)c V D V = 400 V D R07DS1422EJ0200 Rev.2.00 Page 2 of 8 Dec. 12, 2018

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY
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