Data Sheet BCR3AM-14B R07DS1422EJ0200 (Previous: REJ03G1806-0100) 700V - 3A - Triac Rev.2.00 Low Power Use Dec. 12, 2018 Features I : 3 A (non-continuous) Tj: 150 C T (RMS) V : 800 V (Tj = 125 C) Planar Passivation Type DRM I , I , I : 30 mA FGTI RGTI RGT III Outline RENESAS Package code: PRSS0003EA-A PRSS0003DJ-A (Package name: TO-92*) (Package name: TO-92) 2 1. T Terminal 1 2. T Terminal 2 3. Gate Terminal 3 1 1 1 3 3 2 2 Application Non-continuous Motor control and other general purpose non-continuous AC control applications. Maximum Ratings Parameter Symbol Voltage class Unit Conditions 14 Note1 Repetitive peak off-state voltage VDRM 800 V Tj=125 C 700 V Tj=150 C Note1 Non-repetitive peak off-state voltage VDSM 840 V Notes: 1. Gate open. Parameter Symbol Ratings Unit Conditions RMS on-state current I 3 A Commercial frequency, sine full wave T (RMS) 360 conduction, non-continuous Surge on-state current ITSM 30 A 60 Hz sinewave 1 full cycle, peak value, non-repetitive 2 2 2 I t for fusing I t 3.7 A s Value corresponding to 1 cycle of half wave 60 Hz, surge on-state current Peak gate power dissipation PGM 3 W Average gate power dissipation P 0.3 W G (AV) Peak gate voltage VGM 6 V Peak gate current I 0.5 A GM Junction Temperature Tj 40 to +150 C Storage temperature Tstg 40 to +150 C R07DS1422EJ0200 Rev.2.00 Page 1 of 8 Dec. 12, 2018 BCR3AM-14B Data Sheet Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak off-state current I 2.0 mA Tj = 150 C, V applied DRM DRM On-state voltage VTM 1.6 V Tc = 25 C, ITM = 4.5 A, instantaneous measurement Note2 Gate trigger voltage V 1.5 V Tj = 25 C, V = 6 V, R = 6 , FGT D L R = 330 G VRGT 1.5 V V 1.5 V RGT Note2 Gate trigger current I 30 mA Tj = 25 C, V = 6 V, R = 6 , FGT D L R = 330 G IRGT 30 mA I 30 mA RGT Gate non-trigger voltage VGD 0.2 V Tj = 125 C, VD = 1/2 VDRM 0.1 Tj = 150 C, V = 1/2 V D DRM Note3 Thermal resistance Rth (j-c) 50 C/W Junction to case Critical-rate of rise of off-state (dv/dt)c 5 V/ s Tj = 125 C Note4 commutating voltage 1 Tj = 150 C Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms Test conditions (inductive load) 1. Junction temperature Time Supply Voltage Tj = 125C/150C (di/dt)c 2. Rate of decay of on-state commutating current Time Main Current (di/dt)c = 1.5 A/ms Time Main Voltage 3. Peak off-state voltage (dv/dt)c V D V = 400 V D R07DS1422EJ0200 Rev.2.00 Page 2 of 8 Dec. 12, 2018