Preliminary Datasheet CR5AS-12A R07DS0332EJ0200 Tyhristor Rev.2.00 Medium Power Use Sep 06, 2011 Features I : 5 A Non-Insulated Type T (AV) V : 600 V Plannar Type DRM I : 100 A GT Outline RENESAS Package code: PRSS0004ZG-A PRSS0004ZD-D (Package name: MP-3A) (Package name: DPAK(L)-(3)) 4 4 2, 4 1. Cathode 2. Anode 3. Gate 3 1 2 3 1 4. Anode 1 2 3 Applications Switching mode power supply, regulator for autocycle, protective circuit for TV sets, VCRs, and printers, igniter for autocycle, electric tool, strobe flasher, and other general purpose control applications Maximum Ratings Voltage class Parameter Symbol Unit 12 Repetitive peak reverse voltage V 600 V RRM Non-repetitive peak reverse voltage V 720 V RSM DC reverse voltage V 480 V R (DC) Note1 Repetitive peak off-state voltage V 600 V DRM Note1 DC off-state voltage V 480 V D (DC) Notes: 1. With gate to cathode resistance R = 220 . GK R07DS0332EJ0200 Rev.2.00 Page 1 of 8 Sep 06, 2011 CR5AS-12A Preliminary Parameter Symbol Ratings Unit Conditions RMS on-state current I 7.8 A T (RMS) Average on-state current I 5 A Commercial frequency, sine half wave T (AV) 180 conduction, Tc = 88C Surge on-state current I 90 A 60Hz sine half wave 1 full cycle, TSM peak value, non-repetitive 2 2 2 I t for fusing It 33 A s Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Peak gate power dissipation P 0.5 W GM Average gate power dissipation P 0.1 W G (AV) Peak gate forward voltage V 6 V FGM Peak gate reverse voltage V 6 V RGM Peak gate forward current I 0.3 A FGM Junction temperature Tj 40 to +125 C Storage temperature Tstg 40 to +125 C Mass 0.32 g MP-3A, Typical value 0.36 g DPAK(L)-(3), Typical value Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak reverse current I 1.0 mA Tj = 125C, V applied, RRM RRM R = 220 GK Repetitive peak off-state current I 1.0 mA Tj = 125C, V applied, DRM DRM R = 220 GK On-state voltage V 1.8 V Tc = 25C, I = 15 A, TM TM instantaneous value Gate trigger voltage V 0.8 V Tj = 25C, V = 6 V, I = 0.1 A GT D T Gate non-trigger voltage V 0.1 V Tj = 125C, V = 1/2 V , GD D DRM R = 220 GK Gate trigger current I 1 100 A Tj = 25C, V = 6 V, I = 0.1 A GT D T Holding current I 3.5 mA Tj = 25C, V = 12 V, H D R = 220 GK Note2 Thermal resistance R 3.0 C/W Junction to case th (j-c) Notes: 2. The measurement point for case temperature is at anode tab. R07DS0332EJ0200 Rev.2.00 Page 2 of 8 Sep 06, 2011