ISL6612A, ISL6613A Data Sheet May 1, 2012 FN9159.7 Advanced Synchronous Rectified Buck Features MOSFET Drivers with Pre-POR OVP Pin-to-pin Compatible with HIP6601 SOIC family The ISL6612A and ISL6613A are high frequency MOSFET Dual MOSFET Drives for Synchronous Rectified Bridge drivers specifically designed to drive upper and lower power Advanced Adaptive Zero Shoot-Through Protection N-Channel MOSFETs in a synchronous rectified buck - Body Diode Detection converter topology. These drivers combined with HIP63xx or ISL65xx Multi-Phase Buck PWM controllers and N-Channel - Auto-zero of r Conduction Offset Effect DS(ON) MOSFETs form complete core-voltage regulator solutions for Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency advanced microprocessors. 36V Internal Bootstrap Schottky Diode The ISL6612A drives the upper gate to 12V, while the lower Bootstrap Capacitor Overcharging Prevention gate can be independently driven over a range from 5V to 12V. The ISL6613A drives both upper and lower gates over Supports High Switching Frequency (up to 2MHz) a range of 5V to 12V. This drive-voltage provides the - 3A Sinking Current Capability flexibility necessary to optimize applications involving - Fast Rise/Fall Times and Low Propagation Delays trade-offs between gate charge and conduction losses. Three-State PWM Input for Output Stage Shutdown An advanced adaptive zero shoot-through protection is Three-State PWM Input Hysteresis for Applications with integrated to prevent both the upper and lower MOSFETs Power Sequencing Requirement from conducting simultaneously and to minimize the dead time. These products add an overvoltage protection feature Pre-POR Overvoltage Protection operational before VCC exceeds its turn-on threshold, at VCC Undervoltage Protection which the PHASE node is connected to the gate of the low Expandable Bottom Copper Pad for Enhanced Heat side MOSFET (LGATE). The output voltage of the converter Sinking is then limited by the threshold of the low side MOSFET, which provides some protection to the microprocessor if the Dual Flat No-Lead (DFN) Package upper MOSFET(s) is shorted during initial startup. - Near Chip-Scale Package Footprint Improves PCB Efficiency and Thinner in Profile These drivers also feature a three-state PWM input which, working together with Intersils multi-phase PWM controllers, Pb-Free (RoHS Compliant) prevents a negative transient on the output voltage when the Applications output is shut down. This feature eliminates the Schottky diode that is used in some systems for protecting the load Core Regulators for Intel and AMD Microprocessors from reversed output voltage events. High Current DC/DC Converters High Frequency and High Efficiency VRM and VRD Related Literature Technical Brief TB363 Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices (SMDs) Technical Brief TB417 for Power Train Design, Layout Guidelines, and Feedback Compensation Design CAUTION: These devices are sensitive to electrostatic discharge follow proper IC Handling Procedures. 1 1-888-INTERSIL or 1-888-468-3774 Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2005, 2006, 2012. All Rights Reserved All other trademarks mentioned are the property of their respective owners.ISL6612A, ISL6613A Ordering Information PART NUMBER TEMP. PACKAGE PKG. (Notes 2, 3) PART MARKING RANGE (C) (Pb-free) DWG. ISL6612ACBZ 6612 ACBZ 0 to +85 8 Ld SOIC M8.15 M8.15 ISL6612ACBZ-T (Note 1) 6612 ACBZ 0 to +85 8 Ld SOIC Tape and Reel ISL6612ACBZA 6612 ACBZ 0 to +85 8 Ld SOIC M8.15 M8.15 ISL6612ACBZA-T (Note 1) 6612 ACBZ 0 to +85 8 Ld SOIC Tape and Reel ISL6612ACRZ 12AZ 0 to +85 10 Ld 3x3 DFN L10.3x3 L10.3x3 ISL6612ACRZ-T (Note 1) 12AZ 0 to +85 10 Ld 3x3 DFN Tape and Reel ISL6612AECBZ 6612 AECBZ 0 to +85 8 Ld EPSOIC M8.15B M8.15B ISL6612AECBZ-T (Note 1) 6612 AECBZ 0 to +85 8 Ld EPSOIC Tape and Reel ISL6612AEIBZ 6612 AEIBZ -40 to +85 8 Ld EPSOIC M8.15B M8.15B ISL6612AEIBZ-T (Note 1) 6612 AEIBZ -40 to +85 8 Ld EPSOIC Tape and Reel ISL6612AIBZ 6612 AIBZ -40 to +85 8 Ld SOIC M8.15 M8.15 ISL6612AIBZ-T (Note 1) 6612 AIBZ -40 to +85 8 Ld SOIC Tape and Reel ISL6612AIRZ 2AIZ -40 to +85 10 Ld 3x3 DFN L10.3x3 L10.3x3 ISL6612AIRZ-T (Note 1) 2AIZ -40 to +85 10 Ld 3x3 DFN Tape and Reel ISL6613ACBZ 6613 ACBZ 0 to +85 8 Ld SOIC M8.15 M8.15 ISL6613ACBZ-T (Note 1) 6613 ACBZ 0 to +85 8 Ld SOIC Tape and Reel ISL6613ACRZ 13AZ 0 to +85 10 Ld 3x3 DFN L10.3x3 L10.3x3 ISL6613ACRZ-T (Note 1) 13AZ 0 to +85 10 Ld 3x3 DFN Tape and Reel ISL6613AECBZ 6613 AECBZ 0 to +85 8 Ld EPSOIC M8.15B M8.15B ISL6613AECBZ-T (Note 1) 6613 AECBZ 0 to +85 8 Ld EPSOIC Tape and Reel ISL6613AEIBZ 6613 AEIBZ -40 to +85 8 Ld EPSOIC M8.15B M8.15B ISL6613AEIBZ-T (Note 1) 6613 AEIBZ -40 to +85 8 Ld EPSOIC Tape and Reel ISL6613AIBZ 6613 AIBZ -40 to +85 8 Ld SOIC M8.15 M8.15 ISL6613AIBZ-T (Note 1) 6613 AIBZ -40 to +85 8 Ld SOIC Tape and Reel ISL6613AIRZ 3AIZ -40 to +85 10 Ld 3x3 DFN L10.3x3 L10.3x3 ISL6613AIRZ-T (Note 1) 3AIZ -40 to +85 10 Ld 3x3 DFN Tape and Reel NOTES: 1. Please refer to TB347 for details on reel specifications. 2. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pb- free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. 3. For Moisture Sensitivity Level (MSL), please see device information page for ISL6612A, ISL6613A. For more information on MSL please see techbrief TB363. FN9159.7 2 May 1, 2012