DATASHEET ISL6612, ISL6613 FN9153 Rev 9.00 Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features June 15, 2010 The ISL6612 and ISL6613 are high frequency MOSFET Features drivers specifically designed to drive upper and lower power Pin-to-pin Compatible with HIP6601 SOIC family for Better N-Channel MOSFETs in a synchronous rectified buck Performance and Extra Protection Features converter topology. These drivers combined with HIP63xx or ISL65xx Multi-Phase Buck PWM controllers and N-Channel Dual MOSFET Drives for Synchronous Rectified Bridge MOSFETs form complete core-voltage regulator solutions for Advanced Adaptive Zero Shoot-Through Protection advanced microprocessors. - Body Diode Detection The ISL6612 drives the upper gate to 12V, while the lower - Auto-zero of r Conduction Offset Effect DS(ON) gate can be independently driven over a range from 5V to Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency 12V. The ISL6613 drives both upper and lower gates over a 36V Internal Bootstrap Schottky Diode range of 5V to 12V. This drive-voltage provides the flexibility necessary to optimize applications involving trade-offs Bootstrap Capacitor Overcharging Prevention between gate charge and conduction losses. Supports High Switching Frequency (up to 2MHz) An advanced adaptive zero shoot-through protection is - 3A Sinking Current Capability integrated to prevent both the upper and lower MOSFETs from - Fast Rise/Fall Times and Low Propagation Delays conducting simultaneously and to minimize the dead time. Three-State PWM Input for Output Stage Shutdown These products add an overvoltage protection feature operational before VCC exceeds its turn-on threshold, at which Three-State PWM Input Hysteresis for Applications With the PHASE node is connected to the gate of the low side Power Sequencing Requirement MOSFET (LGATE). The output voltage of the converter is then Pre-POR Overvoltage Protection limited by the threshold of the low side MOSFET, which provides some protection to the microprocessor if the upper VCC Undervoltage Protection MOSFET(s) is shorted during startup. The over-temperature Over Temperature Protection (OTP) with +42C protection feature prevents failures resulting from excessive Hysteresis power dissipation by shutting off the outputs when its junction Expandable Bottom Copper Pad for Enhanced Heat temperature exceeds +150C (typically). The driver resets once Sinking its junction temperature returns to +108C (typically). Dual Flat No-Lead (DFN) Package These drivers also feature a three-state PWM input which, - Near Chip-Scale Package Footprint Improves PCB working together with Intersils multi-phase PWM controllers, Efficiency and Thinner in Profile prevents a negative transient on the output voltage when the output is shut down. This feature eliminates the Schottky Pb-Free Available (RoHS Compliant) diode that is used in some systems for protecting the load Applications from reversed output voltage events. Core Regulators for Intel and AMD Microprocessors High Current DC/DC Converters High Frequency and High Efficiency VRM and VRD Related Literature Technical Brief TB363 Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices (SMDs) Technical Brief TB417 for Power Train Design, Layout Guidelines, and Feedback Compensation Design FN9153 Rev 9.00 Page 1 of 12 June 15, 2010ISL6612, ISL6613 Ordering Information PART PART TEMP. RANGE PKG. NUMBER MARKING (C) PACKAGE DWG. ISL6612CBZ (Note 2) 6612 CBZ 0 to +85 8 Ld SOIC (Pb-Free) M8.15 ISL6612CBZ-T (Notes 1, 2) 6612 CBZ 0 to +85 8 Ld SOIC (Pb-Free) M8.15 ISL6612CBZA (Note 2) 6612 CBZ 0 to +85 8 Ld SOIC (Pb-Free) M8.15 ISL6612CBZA-T (Notes 1, 2) 6612 CBZ 0 to +85 8 Ld SOIC (Pb-Free) M8.15 ISL6612CRZ (Note 2) 612Z 0 to +85 10 Ld 3x3 DFN (Pb-Free) L10.3x3 ISL6612CRZ-T (Notes 1, 2) 612Z 0 to +85 10 Ld 3x3 DFN (Pb-Free) L10.3x3 ISL6612ECB-T (Note 1) ISL66 12ECB 0 to +85 8 Ld EPSOIC M8.15B ISL6612ECBZ (Note 2) 6612 ECBZ 0 to +85 8 Ld EPSOIC (Pb-Free) M8.15B ISL6612ECBZ-T (Notes 1, 2) 6612 ECBZ 0 to +85 8 Ld EPSOIC (Pb-Free) M8.15B ISL6612EIBZ (Note 2) 6612 EIBZ -40 to +85 8 Ld EPSOIC (Pb-Free) M8.15B ISL6612EIBZ-T (Notes 1, 2) 6612 EIBZ -40 to +85 8 Ld EPSOIC (Pb-Free) M8.15B ISL6612IBZ (Note 2) 6612 IBZ -40 to +85 8 Ld SOIC (Pb-Free) M8.15 ISL6612IBZ-T (Notes 1, 2) 6612 IBZ -40 to +85 8 Ld SOIC (Pb-Free) M8.15 ISL6612IRZ (Note 2) 12IZ -40 to +85 10 Ld 3x3 DFN (Pb-Free) L10.3x3 ISL6612IRZ-T (Notes 1, 2) 12IZ -40 to +85 10 Ld 3x3 DFN (Pb-Free) L10.3x3 ISL6613CBZ (Note 2) 6613 CBZ 0 to +85 8 Ld SOIC (Pb-Free) M8.15 ISL6613CBZ-T (Notes 1, 2) 6613 CBZ 0 to +85 8 Ld SOIC (Pb-Free) M8.15 ISL6613CRZ (Note 2) 613Z 0 to +85 10 Ld 3x3 DFN (Pb-Free) L10.3x3 ISL6613CRZ-T (Notes 1, 2) 613Z 0 to +85 10 Ld 3x3 DFN (Pb-Free) L10.3x3 ISL6613ECBZ (Note 2) 6613 ECBZ 0 to +85 8 Ld EPSOIC (Pb-Free) M8.15B ISL6613ECBZ-T (Notes 1, 2) 6613 ECBZ 0 to +85 8 Ld EPSOIC (Pb-Free) M8.15B ISL6613EIBZ (Note 2) 6613 EIBZ -40 to +85 8 Ld EPSOIC (Pb-Free) M8.15B ISL6613EIBZ-T (Notes 1, 2) 6613 EIBZ -40 to +85 8 Ld EPSOIC (Pb-Free) M8.15B ISL6613IBZ (Note 2) 6613 IBZ -40 to +85 8 Ld SOIC (Pb-Free) M8.15 ISL6613IBZ-T (Notes 1, 2) 6613 IBZ -40 to +85 8 Ld SOIC (Pb-Free) M8.15 ISL6613IRZ (Note 2) 13IZ -40 to +85 10 Ld 3x3 DFN (Pb-Free) L10.3x3 ISL6613IRZ-T (Notes 1, 2) 13IZ -40 to +85 10 Ld 3x3 DFN (Pb-Free) L10.3x3 NOTES: 1. Please refer to TB347 for details on reel specifications. 2. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD- 020. 3. For Moisture Sensitivity Level (MSL), please see device information page for ISL6612, ISL6613. For more information on MSL please see techbrief TB363. FN9153 Rev 9.00 Page 2 of 12 June 15, 2010