DATASHEET ISL6615A FN6608 Rev 2.00 High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features April 13, 2012 The ISL6615A is a high-speed MOSFET driver optimized to Features drive upper and lower power N-Channel MOSFETs in a Dual MOSFET Drives for Synchronous Rectified Bridge synchronous rectified buck converter topology. This driver, combined with an Intersil Digital or Analog multiphase PWM Advanced Adaptive Zero Shoot-Through Protection controller, forms a complete high frequency and high -Body Diode Detection efficiency voltage regulator. -LGATE Detection The ISL6615A drives both upper and lower gates over a range - Auto-zero of r Conduction Offset Effect DS(ON) of 4.5V to 13.2V. This drive-voltage provides the flexibility Adjustable Gate Voltage for Optimal Efficiency necessary to optimize applications involving trade-offs between gate charge and conduction losses. 36V Internal Bootstrap Schottky Diode Bootstrap Capacitor Overcharging Prevention The ISL6615A features 6A typical sink current for the low-side gate driver, enhancing the lower MOSFET gate hold-down Supports High Switching Frequency (up to 1MHz) capability during PHASE node rising edge, preventing power - 6A LGATE Sinking Current Capability loss caused by the self turn-on of the lower MOSFET due to the - Fast Rise/Fall Times and Low Propagation Delays high dV/dt of the switching node. Support 5V PWM Input Logic An advanced adaptive zero shoot-through protection is integrated to prevent both the upper and lower MOSFETs from Tri-State PWM Input for Safe Output Stage Shutdown conducting simultaneously and to minimize the dead-time. Tri-State PWM Input Hysteresis for Applications with Power The ISL6615A includes an overvoltage protection feature Sequencing Requirement operational before VCC exceeds its turn-on threshold, at which Pre-POR Overvoltage Protection the PHASE node is connected to the gate of the low side MOSFET (LGATE). The output voltage of the converter is then VCC Undervoltage Protection limited by the threshold of the low side MOSFET, which Expandable Bottom Copper PAD for Better Heat Spreading provides some protection to the load if the upper MOSFET(s) is Dual Flat No-Lead (DFN) Package shorted. - Near Chip-Scale Package Footprint Improves PCB The ISL6615A also features an input that recognizes a Efficiency and Thinner in Profile high-impedance state, working together with Intersil multiphase PWM controllers to prevent negative transients on Pb-free (RoHS compliant) the controlled output voltage when operation is suspended. This feature eliminates the need for the Schottky diode that Applications may be utilized in a power system to protect the load from Optimized for POL DC/DC Converters for IBA Systems negative output voltage damage. Core Regulators for Intel and AMD Microprocessors High Current Low-Profile DC/DC Converters High Frequency and High Efficiency VRM and VRD Synchronous Rectification for Isolated Power Supplies Related Literature Technical Brief TB363 Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices (SMDs) Technical Brief TB389 PCB Land Pattern Design and Surface Mount Guidelines for QFN Packages FN6608 Rev 2.00 Page 1 of 13 April 13, 2012ISL6615A Block Diagram ISL6615A (UVCC) BOOT VCC UGATE PRE-POR OVP +5V PHASE FEATURES SHOOT- (LVCC) THROUGH 10k PVCC PROTECTION UVCC = PVCC POR/ PWM CONTROL LOGIC LGATE 8k GND SUBSTRATE RESISTANCE FOR DFN DEVICES, THE PAD ON THE BOTTOM SIDE OF PAD THE PACKAGE MUST BE SOLDERED TO THE CIRCUITS GROUND. Typical Application - 2 Channel Converter V IN +7V TO +13.2V +5V BOOT PVCC +5V FB COMP VCC VCC UGATE VSEN PWM PWM1 ISL6615A PWM2 PHASE PGOOD LGATE PWM GND CONTROL (ISL63xx OR ISL65xx) ISEN1 VID +V CORE (OPTIONAL) +7V TO +13.2V V ISEN2 IN PVCC BOOT FS/EN VCC GND UGATE PWM ISL6615A PHASE LGATE GND THE ISL6615A CAN SUPPORT 5V PWM INPUT FN6608 Rev 2.00 Page 2 of 13 April 13, 2012