VR11.1, VR12 Compatible Synchronous Rectified Buck MOSFET Driver ISL6627 Features The ISL6627 is a high frequency MOSFET driver designed to drive Intersil VR11.1 and VR12 Compatible upper and lower power N-Channel MOSFETs in a synchronous Dual MOSFET Driver for Synchronous Rectified Bridge rectified buck converter topology. The advanced PWM protocol of Advanced Adaptive Zero Shoot-through Protection ISL6627 is specifically designed to work with Intersil VR11.1, Programmable Fixed Deadtime for Efficiency Optimization VR12 controllers and combined with N-Channel MOSFETs to form a complete core-voltage regulator solution for advanced Low Standby Bias Current microprocessors. When ISL6627 detects a PSI protocol sent by 36V Internal Bootstrap Diode an Intersil VR11.1, VR12 controller, it activates Diode Emulation (DE) operation otherwise, it operates in normal Continuous Bootstrap Capacitor Overcharge Prevention Conduction Mode (CCM) PWM mode. Supports High Switching Frequency To further enhance light load efficiency, the ISL6627 enables - 4A Sinking Current Capability diode emulation operation during PSI mode. This allows - Fast Rise/Fall Times and Low Propagation Delays Discontinuous Conduction Mode (DCM) by detecting when the Integrated High-Side Gate-to-Source Resistor to Prevent Self inductor current reaches zero and subsequently turning off the Turn-on Due to High Input Bus dV/dt low side MOSFET to prevent it from sinking current. Power Rails Undervoltage Protection When ISL6627 detects Diode Braking command from the PWM, Expandable Bottom Copper Pad for Enhanced Heat Sinking it turns off both gates and reduces overshoot in load transient situations. Dual Flat 10 Ld (3x3 DFN) Package - Near Chip-Scale Package Footprint Improves PCB Efficiency An advanced adaptive shoot-through protection is integrated to and Thinner in Profile prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize dead time. The user also has the Pb-Free (RoHS Compliant) option to program the driver working in fixed propagation delay mode to optimize the regulator efficiency. The ISL6627 has a Applications 20k integrated high-side gate-to-source resistor to prevent self High Light Load Efficiency Voltage Regulators turn-on due to high input bus dV/dt. Core Regulators for Advanced Microprocessors Related Literature High Current DC/DC Converters Technical Brief TB363 Guidelines for Handling and Processing High Frequency and High Efficiency VRM and VRD Moisture Sensitive Surface Mount Devices (SMDs) Technical Brief TB417 Designing Stable Compensation Networks for Single Phase Voltage Mode Buck Regulators BOOT TD UGATE VCC EN 20k SHOOT- PHASE +5V THROUGH POR/ PROTECTION/ CONTROL 33.6k DELAY LOGIC PROGRAMMING PWM LGATE 28.8k GND FIGURE 1. ISL6627 BLOCK DIAGRAM September 22, 2011 CAUTION: These devices are sensitive to electrostatic discharge follow proper IC Handling Procedures. 1 1-888-INTERSIL or 1-888-468-3774 Copyright Intersil Americas Inc. 2011. All Rights Reserved FN6992.0 Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries. All other trademarks mentioned are the property of their respective owners.ISL6627 Typical Application Circuit VINF +5V +5V BOOT EN UGATE VCC PHASE ISL6627 GND DRIVER PWM DVC FB COMP VCC LGATE PWM1 ISEN1- PSICOMP HFCOMP ISEN1+ VINF +5V VSEN BOOT RGND EN UGATE VTT EN VTT VCC PHASE ISL6627 SVDATA DRIVER GND SVALERT PWM SVCLK PWM2 LGATE VR RDY ISEN2- VR RDYS ISEN2+ PWM3-5 VR HOT ISEN3-5- ISEN3-5+ VINF ISL6367 I2CLK VINF PMALERT BOOT EN PWR CFP I2DATA CPU +5V VINF LOAD VCTRL UGATE VCC CFP PHASE ISL6596 DRIVER GND RAMP ADJ PWM LGATE PWM6 ISEN6- IMON IMONS ISEN6+ FS DRP VIN VINF FSS DRPS R SENIN R RISENIN2 ISENIN1 ISENIN- +5V ISENIN+ +5V +5V BOOT BTS DES TCOMPS +5V EN UGATE BT FDVID TCOMP GND VCC PHASE ISL6627 DRIVER GND +5V ADDR IMAXS TMAX PWM GPU LGATE PWMS LOAD ISENS- NPSI DE IMAX +5V ISENS+ +5V TMS NTC RGNDS VSENS TM HFCOMPS/DVCS NTC AUTO FBS RSET COMPS NTC: BETA = 3477 FN6992.0 2 September 22, 2011