QS3VH245QG Renesas

IDTQS3VH245 INDUSTRIAL TEMPERATURE RANGE 2.5V / 3.3V 8-BIT HIGH BANDWIDTH BUS SWITCH QUICKSWITCH PRODUCTS IDTQS3VH245 2.5V / 3.3V 8-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: DESCRIPTION: N channel FET switches with no parasitic diode to VCC The QS3VH245 HotSwitch 8-bit bus switch is a high bandwidth bus Isolation under power-off conditions switch. The QS3VH245 has very low ON resistance, resulting in under No DC path to VCC or GND 250ps propagation delay through the switch. The switches can be turned 5V tolerant in OFF and ON state ON under the control of the LVTTL-compatible Output Enable signal for 5V tolerant I/Os bidirectional data flow with no added delay or ground bounce. In the ON Low RON - 4 typical state, the switches can pass signals up to 5V. In the OFF state, the switches Flat RON characteristics over operating range offer very high impedence at the terminals. Rail-to-rail switching 0 - 5V The combination of near-zero propagation delay, high OFF impedance, Bidirectional dataflow with near-zero delay: no added ground and over-voltage tolerance makes the QS3VH245 ideal forhigh perfor- bounce mance communications applications. Excellent RON matching between channels The QS3VH245 is characterized for operation from -40C to +85C. VCC operation: 2.3V to 3.6V High bandwidth - up to 500MHz LVTTL-compatible control Inputs Undershoot Clamp Diodes on all switch and control Inputs Low I/O capacitance, 4pF typical Available in QSOP, SOIC, and TSSOP packages APPLICATIONS: Hot-swapping 10/100 Base-T, Ethernet LAN switch Low distortion analog switch Replaces mechanical relay ATM 25/155 switching Bus switching and isolation FUNCTIONAL BLOCK DIAGRAM A0 A1 A2 A3 A4 A5 A6 A7 OE B0 B1 B2 B3 B4 B5 B6 B7 The IDT logo is a registered trademark of Integrated Device Technology, Inc. INDUSTRIAL TEMPERATURE RANGE FEBRUARY 2014 1 c 2014 Integrated Device Technology, Inc. DSC-5775/10IDTQS3VH245 2.5V / 3.3V 8-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE (1) ABSOLUTE MAXIMUM RATINGS PIN CONFIGURATION Symbol Description Max Unit (2) VTERM SupplyVoltage to Ground 0.5 to +4.6 V (3) VTERM DC Switch Voltage VS 0.5 to +5.5 V (3) VTERM DC Input Voltage VIN 0.5 to +5.5 V VCC NC 1 20 VAC AC Input Voltage (pulse width 20ns) 3 V 19 2 A0 OE IOUT DC Output Current (max. sink current/pin) 120 mA TSTG Storage Temperature 65 to +150 C 3 A1 18 B0 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause A2 4 17 B1 permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational A3 5 16 B2 sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. A4 6 15 B3 2. VCC terminals. 3. All terminals except VCC . A5 7 14 B4 8 13 A6 B5 A7 9 12 B6 CAPACITANCE (TA = +25C, F = 1MHz, VIN = 0V, VOUT = 10 11 GND B7 (1) 0V)Symbol Parameter Typ. Max. Unit CIN Control Inputs 3 5 pF CI/O Quickswitch Channels (Switch OFF) 4 6 pF QSOP/ SOIC/ TSSOP CI/O Quickswitch Channels (Switch ON) 8 12 pF TOP VIEW NOTE: 1. This parameter is guaranteed but not production tested. PIN DESCRIPTION Pin Names Description OE Output Enable Ax Data I/Os Bx Data I/Os (1) FUNCTION TABLE OE Outputs H Disconnected L Ax = Bx NOTE: 1. H = HIGH Voltage Level L = LOW Voltage Level 2