QS3VH251PAG Renesas

IDTQS3VH251 INDUSTRIAL TEMPERATURE RANGE 2.5V / 3.3V QUAD 8:1 MUX/DEMUX HIGH BANDWIDTH BUS SWITCH IDTQS3VH251 QUICKSWITCH PRODUCTS 2.5V / 3.3V 8:1 MUX / DEMUX HIGH BANDWIDTH BUS SWITCH FEATURES: DESCRIPTION: N channel FET switches with no parasitic diode to VCC The QS3VH251 HotSwitch Quad 2:1 multiplexer/demultiplexer is a high Isolation under power-off conditions bandwidth bus switch. The QS3VH251 has very low ON resistance, No DC path to VCC or GND resulting in under 250ps propagation delay through the switch. The Select 5V tolerant in OFF and ON state (Sx) input controls the data flow. The multiplexers/demultiplexers are 5V tolerant I/Os enabled when the Enable (E) input is low. In the ON state, the switches can Low RON - 4 typical pass signals up to 5V. In the OFF state, the switches offer very high Flat RON characteristics over operating range impedence at the terminals. Rail-to-rail switching 0 - 5V The combination of near-zero propagation delay, high OFF impedance, Bidirectional dataflow with near-zero delay: no added ground and over-voltage tolerance makes the QS3VH251 ideal for high perfor- bounce mance comminucation applications. Excellent RON matching between channels The QS3VH251 is characterized for operation from -40C to +85C. VCC operation: 2.3V to 3.6V High bandwidth - up to 500MHz LVTTL-compatible control Inputs Undershoot Clamp Diodes on all switch and control Inputs Low Demux capacitance, 4pF typical Available in QSOP and TSSOP packages APPLICATIONS: Hot-swapping Multiplexing/demultiplexing Low distortion analog switch Replaces mechanical relay ATM 25/155 switching FUNCTIONAL BLOCK DIAGRAM S0 S1 S2 E I0 I1 I2 I3 Y I4 I5 I6 I7 The IDT logo is a registered trademark of Integrated Device Technology, Inc. INDUSTRIAL TEMPERATURE RANGE FEBRUARY 2014 1 c 2014 Integrated Device Technology, Inc. DSC-5944/11IDTQS3VH251 2.5V / 3.3V QUAD 8:1 MUX/DEMUX HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE (1) ABSOLUTE MAXIMUM RATINGS PIN CONFIGURATION Symbol Description Max Unit (2) VTERM SupplyVoltage to Ground 0.5 to +4.6 V (3) VTERM DC Switch Voltage VS 0.5 to +5.5 V (3) VTERM DC Input Voltage VIN 0.5 to +5.5 V I3 VCC 1 16 VAC AC Input Voltage (pulse width 20ns) 3 V IOUT DC Output Current (max. sink current/pin) 120 mA 2 15 I4 I2 TSTG Storage Temperature 65 to +150 C NOTES: I5 3 14 I1 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of 13 I6 I0 4 the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. I7 12 5 Y 2. VCC terminals. 3. All terminals except VCC . 11 NC 6 S0 10 E 7 S1 CAPACITANCE (TA = +25C, F = 1MHz, VIN = 0V, VOUT = (1) GND 8 9 S2 0V) Symbol Parameter Typ. Max. Unit CIN Control Inputs 3 5 pF CI/O Quickswitch Channels Demux 4 6 pF (Switch OFF) Mux 19 25 QSOP/ TSSOP CI/O Quickswitch Channels Demux 20 28 pF TOP VIEW (Switch ON) Mux 20 28 NOTE: 1. This parameter is guaranteed but not production tested. (1) FUNCTION TABLE Select PIN DESCRIPTION E S2 S1 S0 Y Function Pin Names I/O Description H X X X Z Disable I0 - I7 I Data Inputs LL LL I0 S2 - S0 = 0 S0 - S2 I Select Input E I Enable Input LL L H I1 S2 - S0 = 1 Y O Data Outputs LL H L I2 S2 - S0 = 2 LL H H I3 S2 - S0 = 3 LH L L I4 S2 - S0 = 4 LH LH I5 S2 - S0 = 5 LH HL I6 S2 - S0 = 6 LH H H I7 S2 - S0 = 7 NOTE: 1. H = HIGH Voltage Level L = LOW Voltage Level X = Don t Care Z = High-Impedence 2