IDTQS3VH253 INDUSTRIAL TEMPERATURE RANGE 2.5V / 3.3V DUAL 4:1 MUX/DEMUX HIGH BANDWIDTH BUS SWITCH IDTQS3VH253 QUICKSWITCH PRODUCTS 2.5V / 3.3V DUAL 4:1 MUX/DEMUX HIGH BANDWIDTH BUS SWITCH FEATURES: DESCRIPTION: N channel FET switches with no parasitic diode to VCC The QS3VH253 HotSwitch Dual 4:1 multiplexer/demultiplexer is a high Isolation under power-off conditions bandwidth bus switch. The QS3VH253 has very low ON resistance, No DC path to VCC or GND resulting in under 250ps propagation delay through the switch. The Select 5V tolerant in OFF and ON state (Sx) inputs control the data flow. The multiplexers/demultiplexers are 5V tolerant I/Os enabled when the Enable (EA, EB) inputs are low. In the ON state, the Low RON - 4 typical switches can pass signals up to 5V. In the OFF state, the switches offer very Flat RON characteristics over operating range high impedance at the terminals. Rail-to-rail switching 0 - 5V The combination of near-zero propagation delay, high OFF impedance, Bidirectional dataflow with near-zero delay: no added ground and over-voltage tolerance makes the QS3VH253 ideal for high perfor- bounce mance communication applications. Excellent RON matching between channels The QS3VH253 is characterized for operation from -40C to +85C. VCC operation: 2.3V to 3.6V High bandwidth - up to 500MHz LVTTL-compatible control Inputs Undershoot Clamp Diodes on all switch and control Inputs Low I/O capacitance, 4pF typical Available in QSOP and TSSOP packages APPLICATIONS: Hot-swapping Multiplexing/demultiplexing Low distortion analog switch Replaces mechanical relay ATM 25/155 switching FUNCTIONAL BLOCK DIAGRAM S0 S1 EA EB I0 A I1 A Y A I2 A I3 A I0 B I1 B Y B I2 B I3 B The IDT logo is a registered trademark of Integrated Device Technology, Inc. INDUSTRIAL TEMPERATURE RANGE FEBRUARY 2014 1 c 2014 Integrated Device Technology, Inc. DSC-5945/11IDTQS3VH253 2.5V / 3.3V DUAL 4:1 MUX/DEMUX HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE (1) ABSOLUTE MAXIMUM RATINGS PIN CONFIGURATION Symbol Description Max Unit (2) VTERM SupplyVoltage to Ground 0.5 to +4.6 V (3) VTERM DC Switch Voltage VS 0.5 to +5.5 V (3) VTERM DC Input Voltage VIN 0.5 to +5.5 V EA VCC VAC AC Input Voltage (pulse width 20ns) 3 V 1 16 IOUT DC Output Current (max. sink current/pin) 120 mA EB 2 15 S1 TSTG Storage Temperature 65 to +150 C NOTES: S0 3 14 I3A 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational 13 I3B I2A 4 sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. I2B 12 5 I1A 2. VCC terminals. 3. All terminals except VCC . 11 I1B 6 I0A 10 YA 7 I0B CAPACITANCE (TA = +25C, F = 1MHz, VIN = 0V, VOUT = (1) 0V) Symbol Parameter Typ. Max. Unit GND 8 9 YB CIN Control Inputs 3 5 pF CI/O Quickswitch Channels Demux 4 6 pF (Switch OFF) Mux 11 15 QSOP/ TSSOP CI/O Quickswitch Channels Demux 12 16 pF TOP VIEW (Switch ON) Mux 12 16 NOTE: 1. This parameter is guaranteed but not production tested. (1) FUNCTION TABLE Enable Select Outputs PIN DESCRIPTION EA EB S1 S0 YA YB Function Pin Names I/O Description H X X X Z X Disable A Ixx I Data Inputs X H X X X Z Disable B S0, S1 I Select Input EA, EB I Enable Input LLLL I0A I0B S1 - 0 = 0 YA, YB O Data Outputs LLL H I1A I1B S1 - 0 = 1 LL H L I2A I2B S1 - 0 = 2 L L HHI3A I3B S1 - 0 = 3 NOTE: 1. H = HIGH Voltage Level L = LOW Voltage Level X = Don t Care Z = High-Impedence 2
