R1LV0216BSB-5SI#B0 Renesas

R1LV0216BSB 2Mb Advanced LPSRAM (128k word x 16bit) R10DS0051EJ0100 Rev.1.00 2011.03.30 Description The R1LV0216BSB is a family of low voltage 2-Mbit static RAMs organized as 131,072-word by 16-bit, fabricated by Renesass high-performance 0.15um CMOS and TFT technologies. The R1LV0216BSB has realized higher density, higher performance and low power consumption. The R1LV0216BSB is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. The R1LV0216BSB has been packaged in 44-pin TSOP. Features Single 2.7~3.6V power supply Small stand-by current: 1A (3.0V, typical) No clocks, No refresh All inputs and outputs are TTL compatible. Easy memory expansion by CS , LB and UB Common Data I/O Three-state outputs: OR-tie Capability OE prevents data contention on the I/O bus Ordering Information Access Temperature Shipping Orderable Part Name Package Quantity time Range Container R1LV0216BSB-5SR B0 0 ~ +70C 55 ns R1LV0216BSB-5SI B0 -40 ~ +85C Max. 135pcs/Tray Tray 400-mil 44pin plastic Max. 1080pcs/Inner Box R1LV0216BSB-7SR B0 0 ~ +70C TSOP (II) 70 ns R1LV0216BSB-7SI B0 -40 ~ +85C (normal-bend type) R1LV0216BSB-5SR S0 0 ~ +70C 55 ns PTSB0044GD-B R1LV0216BSB-5SI S0 -40 ~ +85C Embossed (44P3F-B) 1000pcs/Reel tape R1LV0216BSB-7SR S0 0 ~ +70C 70 ns R1LV0216BSB-7SI S0 -40 ~ +85C R10DS0051EJ0100 Rev.1.00 Page 1 of 14 2011.03.30 R1LV0216BSB Pin Arrangement A4 1 44 A5 A3 2 43 A6 A2 3 42 A7 A1 4 41 OE A0 5 40 UB CS 6 39 LB DQ0 7 38 DQ15 DQ1 8 37 DQ14 44-pin TSOP (II) DQ2 9 36 DQ13 DQ3 10 35 DQ12 Vcc 11 34 GND GND 12 33 Vcc DQ4 13 32 DQ11 DQ5 14 31 DQ10 DQ6 15 30 DQ9 DQ7 16 29 DQ8 WE 17 28 NC A16 18 27 A8 A15 19 26 A9 A14 20 25 A10 A13 21 24 A11 A12 22 23 NC Pin Description Pin name Function Vcc Power supply Vss Ground A0 to A16 Address input DQ0 to DQ15 Data input/output CS Chip select 1 WE Write enable OE Output enable LB Lower byte enable UB Upper byte enalbe NC Non connection R10DS0051EJ0100 Rev.1.00 Page 2 of 14 2011.03.30