R1LV0816ASB7SI#B0 Renesas

R1LV0816ASB 5SI, 7SI 8Mb Advanced LPSRAM (512k word x 16bit) REJ03C0387-0100 Rev.1.00 2009.12.07 Description The R1LV0816ASB is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas s high-performance 0.15um CMOS and TFT technologies. The R1LV0816ASB is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. The R1LV0816ASB is packaged in a 44pin thin small outline mount device 11.76mm18.41mm 44-pin plastic TSOP (II) . It gives the best solution for a compaction of mounting area as well as flexibility of wiring pattern of printed circuit boards. Features Single 2.4-3.6V power supply Small stand-by current: 1.2A (Vcc=3.0V, typ.) No clocks, No refresh All inputs and outputs are TTL compatible Easy memory expansion by CS , LB and UB Common Data I/O Three-state outputs: OR-tie capability OE prevents data contention in the I/O bus Operation temperature: -40 ~ +85C Ordering information Temperature Type No. Power supply Access time Package Range 2.7V to 3.6V 55 ns R1LV0816ASB-5SI 11.76mm18.41mm 44-pin plastic TSOP (II) -40 ~ +85C 2.4V to 2.7V 70 ns (normal-bend type) (44P3F) R1LV0816ASB-7SI 2.4V to 3.6V 70 ns REJ03C0387-0100 Rev.1.00 2009.12.07 Page 1 of 15 R1LV0816ASB 5SI, 7SI Pin Arrangement 44-pin TSOP (II) 1 44 A4 A5 2 43 A3 A6 3 42 A2 A7 4 41 A1 OE 5 40 A0 UB 6 39 CS LB 7 38 DQ0 DQ15 8 37 DQ1 DQ14 9 36 DQ2 DQ13 10 35 DQ3 DQ12 11 34 VCC GND 12 33 GND VCC 13 32 DQ4 DQ11 14 31 DQ5 DQ10 15 30 DQ6 DQ9 16 29 DQ7 DQ8 17 28 WE A8 18 27 A18 A9 19 26 A17 A10 20 25 A16 A11 21 24 A15 A12 22 23 A14 A13 REJ03C0387-0100 Rev.1.00 2009.12.07 Page 2 of 15