R1WV3216RBG-7SI#B0 Renesas

R1WV3216R Series REJ03C0215-0300Z Rev.3.00 32Mb Advanced LPSRAM (2M wordx16bit) 2008.03.03 Description The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit, fabricated by Renesas s high-performance 0.15um CMOS and TFT technologies. The R1WV3216R Series is suitable for memory applications where a simple interfacing , battery operating and battery backup are the important design objectives. The R1WV3216R Series is made by stacked-micro-package technology and two chips of 16Mbit Advanced LPSRAMs are assembled in one package. The R1WV3216R Series is packaged in a 52pin micro thin small outline mount device TSOP / 10.79mm x 10.49mm with the pin-pitch of 0.4mm or a 48balls fine pitch ball grid array f-BGA / 7.5mmx8.5mm with the ball-pitch of 0.75mm and 6x8 array . It gives the best solution for a compaction of mounting area as well as flexibility of wiring pattern of printed circuit boards. Features Single 2.7-3.6V power supply Small stand-by current:4A (3.0V, typ.) Data retention supply voltage =2.0V No clocks, No refresh All inputs and outputs are TTL compatible. Easy memory expansion by CS1 , CS2, LB and UB Common Data I/O Three-state outputs: OR-tie capability OE prevents data contention on the I/O bus Process technology: 0.15um CMOS REJ03C0215-0300Z Rev.3.00 2008.03.03 page 1 of 15R1W V3216R Series Ordering Information Type No. Access time Package R1WV3216RSD-7S% 70 ns 350-mil 52-pin plastic - TSOP(II) (normal-bend type) (52PTG) R1WV3216RSD-8S% 85 ns R1WV3216RBG-7S% 70 ns 7.5mmx8.5mm f-BGA 0.75mm pitch 48ball R1WV3216RBG-8S% 85 ns % - Temperature version see table below % Temperature Range R 0 ~ +70 C I -40 ~ +85 C REJ03C0215-0300Z Rev.3.00 2008.03.03 page 2 of 15