X-On Electronics has gained recognition as a prominent supplier of R1WV6416RSA-5SI#B0 SRAM across the USA, India, Europe, Australia, and various other global locations. R1WV6416RSA-5SI#B0 SRAM are a product manufactured by Renesas. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

R1WV6416RSA-5SI#B0 Renesas

R1WV6416RSA-5SI#B0 electronic component of Renesas
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Part No.R1WV6416RSA-5SI#B0
Manufacturer: Renesas
Category: SRAM
Description: SRAM Chip Async Single 3V 64M-bit 8M/4M x 8/16-bit 55ns 48-Pin TSOP-I Tray
Datasheet: R1WV6416RSA-5SI#B0 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3: USD 187.4275 ea
Line Total: USD 562.28 
Availability - 3249
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
3249
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3
Multiples : 1
3 : USD 187.4275
25 : USD 183.6737
100 : USD 176.1825
500 : USD 168.6912
1000 : USD 159.315

   
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RoHS - XON
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We are delighted to provide the R1WV6416RSA-5SI#B0 from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R1WV6416RSA-5SI#B0 and other electronic components in the SRAM category and beyond.

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R1WV6416R Series 64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit) REJ03C0368-0100 Rev.1.00 2009.05.07 Description The R1WV6416R Series is a family of low voltage 64-Mbit static RAMs organized as 4,194,304-word by 16-bit, fabricated by Renesass high-performance 0.15um CMOS and TFT technologies. The R1WV6416R Series is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. The R1WV6416R Series is provided in 48-pin thin small outline package TSOP (I): 12mm x 20mm with pin pitch of 0.5mm , 52-pin micro thin small outline package TSOP (II): 10.79mm x 10.49mm with pin pitch of 0.4mm and 48-ball fine pitch ball grid array f-BGA package. It gives the best solution for compaction of mounting area as well as flexibility of wiring pattern of printed circuit boards. Features Single 2.7~3.6V power supply Small stand-by current: 8 A (3.0V, typical) No clocks, No refresh All inputs and outputs are TTL compatible. Easy memory expansion by CS1 , CS2, LB and UB Common Data I/O Three-state outputs: OR-tie Capability OE prevents data contention on the I/O bus Ordering Information Type No. Access time Package R1WV6416RSA-5S% 55 ns 12mm x 20mm 48-pin plastic TSOP (I) (normal-bend type) (48P3R) R1WV6416RSA-7S% 70 ns R1WV6416RSD-5S% 55 ns 350 mil 52-pin plastic -TSOP (II) (normal-bend type) (52PTG) R1WV6416RSD-7S% 70 ns R1WV6416RBG-5S% 55 ns f-BGA 0.75mm pitch 48-ball R1WV6416RBG-7S% 70 ns % - Temperature version see table below % Temperature Range R 0 ~ +70 C I -40 ~ +85 C REJ03C0368-0100, Rev.1.00, 2009.05.07 Page 1 of 16 R1WV6416R Series Pin Arrangement A15 1 52 A16 A14 2 51 BYTE A13 3 50 UB A12 4 49 Vss A11 5 48 LB 1 2 3 4 5 6 A10 6 47 DQ15/A-1 A9 7 46 DQ7 LB OE A0 A1 A2 A CS2 A8 8 45 DQ14 A19 9 44 DQ6 DQ15 UB A3 A4 CS1 B DQ0 CS1 10 43 DQ13 WE 11 42 DQ5 DQ13 DQ14 A5 A6 DQ1 C DQ2 NC 12 41 DQ12 NC 13 40 DQ4 52-pin TSOP (II) Vss DQ12 A17 A7 DQ3 D Vcc Vcc 14 39 NC CS2 15 38 DQ11 Vcc DQ11 A16 DQ4 A21 Vss E A21 16 37 DQ3 A20 17 36 DQ10 DQ10 DQ9 A15 DQ6 DQ5 A14 F A18 18 35 DQ2 A17 19 34 DQ9 DQ8 A19 A13 WE DQ7 A12 G A7 20 33 DQ1 A6 21 32 DQ8 A18 A8 A10 A11 A20 A9 H A5 22 31 DQ0 A4 23 30 OE A3 24 29 Vss A2 25 28 NC 48-pin f-BGA (TOP VIEW) A1 26 27 A0 A15 1 48 A16 A14 2 47 BYTE A13 3 46 Vss A12 4 45 DQ15/A-1 A11 5 44 DQ7 A10 6 43 DQ14 A9 7 42 DQ6 A8 8 41 DQ13 A19 9 40 DQ5 A20 10 39 DQ12 WE 11 38 DQ4 48-pin TSOP (I) CS2 12 37 Vcc A21 13 36 DQ11 UB 14 35 DQ3 LB 15 34 DQ10 A18 16 33 DQ2 A17 17 32 DQ9 A7 18 31 DQ1 A6 19 30 DQ8 A5 20 29 DQ0 A4 21 28 OE A3 22 27 Vss A2 23 26 CS1 A1 24 25 A0 REJ03C0368-0100, Rev.1.00, 2009.05.07 Page 2 of 16

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY
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