X-On Electronics has gained recognition as a prominent supplier of AS6C1008-55PCN SRAM across the USA, India, Europe, Australia, and various other global locations. AS6C1008-55PCN SRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

AS6C1008-55PCN Alliance Memory

AS6C1008-55PCN electronic component of Alliance Memory
AS6C1008-55PCN Alliance Memory
AS6C1008-55PCN SRAM
AS6C1008-55PCN  Semiconductors

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See Product Specifications
Part No. AS6C1008-55PCN
Manufacturer: Alliance Memory
Category: SRAM
Description: SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM
Datasheet: AS6C1008-55PCN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.939 ea
Line Total: USD 4.94 
Availability - 1278
Ship by Wed. 01 Jan to Fri. 03 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
251
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 8
Multiples : 1
8 : USD 4.303
25 : USD 4.238
75 : USD 4.16
150 : USD 4.069

1278
Ship by Wed. 01 Jan to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 4.939
10 : USD 4.257
104 : USD 4.081
260 : USD 3.96
507 : USD 3.927
1001 : USD 3.795
2509 : USD 3.784
5005 : USD 3.586
10010 : USD 3.586

11
Ship by Wed. 01 Jan to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 6.776
3 : USD 5.866
8 : USD 5.544
104 : USD 5.334

151
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 13
Multiples : 13
13 : USD 6.4078
78 : USD 5.8837
117 : USD 5.5033
156 : USD 5.2182

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Memory Size
Organization
Access Time
Interface Type
Supply Voltage - Max
Supply Voltage - Min
Maximum Operating Temperature
Minimum Operating Temperature
Mounting Style
Package / Case
Packaging
Supply Current - Max
Memory Type
Series
Type
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the AS6C1008-55PCN from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS6C1008-55PCN and other electronic components in the SRAM category and beyond.

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February 2007 AS6C1008 128K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERA L DESCRIPTION The AS6C1008 is a 1,048,57 6-bit low power Access time :55ns CMOS static random access memory organized as Low power consumption: 131,072 words by 8 bits. It is fabricated using very Operating current:10 mA (TYP.) high performance, high reliability CMO S technology. Its Standby current: 1 A (TYP.) standby current is stable within the range of Single 2.7V ~ 5.5V power supply operating temperature. Fully Compatible with all Competitors 5V product Fully Compatible with all Competitors 3.3V product The AS6C1008 is well designed for very low power system applications, and particularly well suited for Fully static operation battery back-up non-volatile memory application. Tri-state output Data retention voltage : 1.5V (MIN.) The AS6C1008 operates from a single power supply All products are ROHS Compliant of 2.7V ~ 5.5V. Package : 32-pin 450 mil SOP . 32-pin 600 mil P-DIP 32-pin 8mm x 20mm TSOP-I 32-pin 8mm x 13.4mm sTSOP 36-ball 6mm x 8mm TFBGA FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION SYMBOL DESCRIPTION A0 - A16 Address Inputs Vcc Vss DQ0 DQ7 Da ta Inputs /Outputs CE , CE2 Chip Enable Inputs 128Kx8 A0-A16 DECODER MEMORYARRAY WE Write Enable Input OE Output Enable Input V C C Pow er Supply V SS G round NC No C onnection I/ODATA DQ0-DQ7 COLUMNI/O CIRCUIT CE CE2 CONTROL CIRCUIT WE OE 02/February/07, v 1.0 Alliance Memory Inc. Page 1 of 14AS6C1008 February 2007 AS6C1008 128K X 8 BIT LOW POWER CMOS SRAM PIN CONFIGURATION NC 1 32 Vcc A16 31 A15 2 A14 3 30 CE2 A12 4 29 WE A11 1 32 OE A9 2 31 A10 A7 5 28 A13 A8 3 30 CE A6 6 27 A8 A13 4 29 DQ7 WE 5 28 DQ6 A5 7 26 A9 CE 2 6 27 DQ5 A15 7 26 DQ4 A4 8 25 A11 Vc c 8 25 DQ3 AS6C1008 NC 9 24 V ss A3 9 24 OE A16 10 23 DQ2 A14 11 22 DQ1 A2 10 23 A10 A12 12 21 DQ0 A1 11 22 CE A7 13 20 A0 A6 14 19 A1 A0 12 21 DQ7 A5 15 18 A2 A4 16 17 A3 DQ0 13 20 DQ6 T S OP -I/sTSOP DQ1 14 19 DQ5 DQ2 15 18 DQ4 Vss 16 17 DQ3 SOP/P-DIP A A0 A1 CE2 A3 A6 A8 DQ4 A2 WE A4 A7 DQ0 B DQ5 NC A5 DQ1 C D Vss Vcc E Vcc Vss F DQ6 NC NC DQ2 DQ7 OE CE A16 A15 DQ3 G A9 A10 A11 A12 A13 A14 H 1 2 3 4 5 6 TFBGA . 02/February/07, v 1.0 Alliance Memory Inc. Page 2 of 14

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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