Datasheet R01DS0131EJ0350 RL78/G13 Rev.3.50 RENESAS MCU Jun 30, 2020 True low-power platform (66 A/MHz, and 0.57 A for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz 1. OUTLINE 1.1 Features Ultra-low power consumption technology DMA (Direct Memory Access) controller VDD = single power supply voltage of 1.6 to 5.5 V 2/4 channels HALT mode Number of clocks during transfer between 8/16-bit SFR and internal RAM: 2 clocks STOP mode SNOOZE mode Multiplier and divider/multiply-accumulator 16 bits 16 bits = 32 bits (Unsigned or signed) RL78 CPU core 32 bits 32 bits = 32 bits (Unsigned) CISC architecture with 3-stage pipeline 16 bits 16 bits + 32 bits = 32 bits (Unsigned or Minimum instruction execution time: Can be changed signed) from high speed (0.03125 s: 32 MHz operation with high-speed on-chip oscillator) to ultra-low speed Serial interface (30.5 s: 32.768 kHz operation with subsystem CSI: 2 to 8 channels clock) UART/UART (LIN-bus supported): 2 to 4 channels Address space: 1 MB 2 2 I C/Simplified I C communication: 3 to 10 channels General-purpose registers: (8-bit register 8) 4 <R> banks Timer On-chip RAM: 2 to 32 KB 16-bit timer: 8 to 16 channels 12-bit interval timer: 1 channel Code flash memory Real-time clock: 1 channel (calendar for 99 years, Code flash memory: 16 to 512 KB alarm function, and clock Block size: 1 KB correction function) Prohibition of block erase and rewriting (security Watchdog timer: 1 channel (operable with the function) dedicated low-speed on-chip On-chip debug function oscillator) Self-programming (with boot swap function/flash shield window function) A/D converter 8/10-bit resolution A/D converter (VDD = 1.6 to 5.5 V) Data Flash Memory Analog input: 6 to 26 channels Data flash memory: 4 KB to 8 KB Internal reference voltage (1.45 V) and temperature Back ground operation (BGO): Instructions can be Note 1 sensor executed from the program memory while rewriting the data flash memory. I/O port Number of rewrites: 1,000,000 times (TYP.) I/O port: 16 to 120 (N-ch open drain I/O withstand Voltage of rewrites: VDD = 1.8 to 5.5 V voltage of 6 V : 0 to 4, N-ch open drain I/O Note 2 VDD withstand voltage /EVDD withstand High-speed on-chip oscillator Note 3 voltage : 5 to 25) Select from 32 MHz, 24 MHz, 16 MHz, 12 MHz, 8 MHz, Can be set to N-ch open drain, TTL input buffer, and 6 MHz, 4 MHz, 3 MHz, 2 MHz, and 1 MHz on-chip pull-up resistor High accuracy: +/- 1.0 % (VDD = 1.8 to 5.5 V, TA = -20 Different potential interface: Can connect to a 1.8/2.5/3 to +85C) V device On-chip key interrupt function Operating ambient temperature On-chip clock output/buzzer output controller TA = -40 to +85C (A: Consumer applications, D: Industrial applications ) Others TA = -40 to +105C (G: Industrial applications) On-chip BCD (binary-coded decimal) correction circuit Power management and reset function Notes 1. Can be selected only in HS (high-speed main) On-chip power-on-reset (POR) circuit mode On-chip voltage detector (LVD) (Select interrupt and 2. Products with 20 to 52 pins reset from 14 levels) 3. Products with 64 to 128 pins Remark The functions mounted depend on the product. See 1.6 Outline of Functions. R01DS0131EJ0350 Rev.3.50 1 of 200 Jun 30, 2020 RL78/G13 1. OUTLINE ROM, RAM capacities Flash Data RAM RL78/G13 ROM flash 20 pins 24 pins 25 pins 30 pins 32 pins 36 pins 128 8 KB 12 R5F100AG R5F100BG R5F100CG KB KB R5F101AG R5F101BG R5F101CG 96 8 KB 8 KB R5F100AF R5F100BF R5F100CF KB R5F101AF R5F101BF R5F101CF 64 4 KB 4 KB R5F1006E R5F1007E R5F1008E R5F100AE R5F100BE R5F100CE Note KB R5F1016E R5F1017E R5F1018E R5F101AE R5F101BE R5F101CE 48 4 KB 3 KB R5F1006D R5F1007D R5F1008D R5F100AD R5F100BD R5F100CD Note KB R5F1016D R5F1017D R5F1018D R5F101AD R5F101BD R5F101CD 32 4 KB 2 KB R5F1006C R5F1007C R5F1008C R5F100AC R5F100BC R5F100CC KB R5F1016C R5F1017C R5F1018C R5F101AC R5F101BC R5F101CC 16 4 KB 2 KB R5F1006A R5F1007A R5F1008A R5F100AA R5F100BA R5F100CA KB R5F1016A R5F1017A R5F1018A R5F101AA R5F101BA R5F101CA Flash Data RAM RL78/G13 ROM flash 40 pins 44 pins 48 pins 52 pins 64 pins 80 pins 100 pins 128 pins 512 8 KB 32 KB R5F100FL R5F100GL R5F100JL R5F100LL R5F100ML R5F100PL R5F100SL Note KB R5F101FL R5F101GL R5F101JL R5F101LL R5F101ML R5F101PL R5F101SL 384 8 KB 24 KB R5F100FK R5F100GK R5F100JK R5F100LK R5F100MK R5F100PK R5F100SK KB R5F101FK R5F101GK R5F101JK R5F101LK R5F101MK R5F101PK R5F101SK 256 8 KB 20 KB R5F100FJ R5F100GJ R5F100JJ R5F100LJ R5F100MJ R5F100PJ R5F100SJ Note KB R5F101FJ R5F101GJ R5F101JJ R5F101LJ R5F101MJ R5F101PJ R5F101SJ 192 8 KB 16 KB R5F100EH R5F100FH R5F100GH R5F100JH R5F100LH R5F100MH R5F100PH R5F100SH KB R5F101EH R5F101FH R5F101GH R5F101JH R5F101LH R5F101MH R5F101PH R5F101SH 128 8 KB 12 KB R5F100EG R5F100FG R5F100GG R5F100JG R5F100LG R5F100MG R5F100PG KB R5F101EG R5F101FG R5F101GG R5F101JG R5F101LG R5F101MG R5F101PG 96 8 KB 8 KB R5F100EF R5F100FF R5F100GF R5F100JF R5F100LF R5F100MF R5F100PF KB R5F101EF R5F101FF R5F101GF R5F101JF R5F101LF R5F101MF R5F101PF 64 4 KB 4 KB R5F100EE R5F100FE R5F100GE R5F100JE R5F100LE Note KB R5F101EE R5F101FE R5F101GE R5F101JE R5F101LE 48 4 KB 3 KB R5F100ED R5F100FD R5F100GD R5F100JD R5F100LD Note KB R5F101ED R5F101FD R5F101GD R5F101JD R5F101LD 32 4 KB 2 KB R5F100EC R5F100FC R5F100GC R5F100JC R5F100LC KB R5F101EC R5F101FC R5F101GC R5F101JC R5F101LC 16 4 KB 2 KB R5F100EA R5F100FA R5F100GA KB R5F101EA R5F101FA R5F101GA Note The flash library uses RAM in self-programming and rewriting of the data flash memory. The target products and start address of the RAM areas used by the flash library are shown below. R5F100xD, R5F101xD (x = 6 to 8, A to C, E to G, J, L): Start address FF300H R5F100xE, R5F101xE (x = 6 to 8, A to C, E to G, J, L): Start address FEF00H R5F100xJ, R5F101xJ (x = F, G, J, L, M, P): Start address FAF00H R5F100xL, R5F101xL (x = F, G, J, L, M, P, S): Start address F7F00H For the RAM areas used by the flash library, see Self RAM list of Flash Self-Programming Library for RL78 Family (R20UT2944). R01DS0131EJ0350 Rev.3.50 2 of 200 Jun 30, 2020