X-On Electronics has gained recognition as a prominent supplier of RQJ0306FQDQA#H6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQJ0306FQDQA#H6 MOSFETs are a product manufactured by Renesas. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQJ0306FQDQA#H6 Renesas

RQJ0306FQDQA#H6 electronic component of Renesas
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Part No.RQJ0306FQDQA#H6
Manufacturer: Renesas
Category: MOSFETs
Description: MOSFET, P CH, 30V, 3A, SC-59A
Datasheet: RQJ0306FQDQA#H6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.4174 ea
Line Total: USD 2.09 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 5
Multiples : 1
5 : USD 0.4174
10 : USD 0.3301
100 : USD 0.252
500 : USD 0.2254
1000 : USD 0.1934
5000 : USD 0.1783

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
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We are delighted to provide the RQJ0306FQDQA#H6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQJ0306FQDQA#H6 and other electronic components in the MOSFETs category and beyond.

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Preliminary Datasheet RQJ0306FQDQA R07DS0298EJ0300 Silicon P Channel MOS FET Rev.3.00 Power Switching Jan 10, 2014 Features Low gate drive V : 30 V and 2.5 V gate drive DSS Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 2 1. Source G 1 2. Gate 3. Drain 2 S 1 Notes: Marking isF. Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 30 V DSS Gate to source voltage V +8 / 12 V GSS Drain current I 3 A D Note1 Drain peak current I 12 A D(pulse) Body - drain diode reverse drain current I 3 A DR Note2 Channel dissipation Pch 0.8 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, Duty cycle 1% 2. When using the glass epoxy board (FR-4 40 40 1 mm) R07DS0298EJ0300 Rev.3.00 Page 1 of 8 Jan 10, 2014 RQJ0306FQDQA Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test conditions Drain to source breakdown voltage V 30 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source breakdown voltage V +8 V I = +100 A, V = 0 (BR)GSS G DS Gate to source breakdown voltage V 12 V I = 100 A, V = 0 (BR)GSS G DS Gate to source leak current I +10 A V = +6 V, V = 0 GSS GS DS Gate to source leak current I 10 A V = 10 V, V = 0 GSS GS DS Drain to source leak current I 1 A V = 30 V, V = 0 DSS DS GS Gate to source cutoff voltage V 0.4 1.4 V V = 10 V, I = -1 mA GS(off) DS D Note3 Drain to source on state resistance R 75 95 m I = 1.5 A, V = 4.5 V DS(on) D GS Note3 Drain to source on state resistance R 120 165 m I = 1.5 A, V = 2.5 V DS(on) D GS Note3 Forward transfer admittance y 3.5 5.2 S I = 1.5 A, V = 10 V fs D DS Input capacitance Ciss 510 pF V = 10 V, V = 0, DS GS Output capacitance Coss 100 pF f = 1 MHz Reverse transfer capacitance Crss 58 pF Turn - on delay time t 18 ns I = 1.5 A d(on) D V = 4.5 V Rise time t 48 ns GS r R = 6.7 Turn - off delay time t 47 ns L d(off) R = 4.7 g Fall time t 13 ns f Total gate charge Qg 4.8 nC V = 10 V DD V = 4.5 V Gate to Source charge Qgs 0.8 nC GS I = 3.0 A Gate to drain charge Qgd 1.8 nC D Note3 Body - drain diode forward voltage V 0.8 1.2 V I = 3.0 A, V = 0 DF F GS Notes: 3. Pulse test R07DS0298EJ0300 Rev.3.00 Page 2 of 8 Jan 10, 2014

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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