Preliminary Datasheet RQK0606KGDQA R07DS0310EJ0300 Silicon N Channel MOS FET Rev.3.00 Power Switching Jan 10, 2014 Features Low on-resistance R = 173 m typ.(at V = 4.5 V, I = 0.8 A) DS(on) GS D Low drive current High speed switching V 60 V and capable of 2.5 V gate drive DSS Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 2 1. Source G 1 2. Gate 3. Drain 2 S 1 Notes: Marking is KG. Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 60 V DSS Gate to source voltage V 12 V GSS Drain current I 1.5 A D Note1 Drain peak current I 6 A D(pulse) Body - drain diode reverse drain current I 1.5 A DR Note2 Channel dissipation Pch 0.8 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, Duty cycle 1% 2. When using the glass epoxy board (FR-4 40 40 1 mm) R07DS0310EJ0300 Rev.3.00 Page 1 of 8 Jan 10, 2014 RQK0606KGDQA Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test conditions Drain to source breakdown voltage V 60 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source breakdown voltage V +12 V I = +100 A, V = 0 (BR)GSS G DS Gate to source breakdown voltage V 12 V I = 100 A, V = 0 (BR)GSS G DS Gate to source leak current I +10 A V = +10 V, V = 0 GSS GS DS Gate to source leak current I 10 A V = 10 V, V = 0 GSS GS DS Drain to source leak current I 1 A V = 60 V, V = 0 DSS DS GS Gate to source cutoff voltage V 0.4 1.4 V V = 10 V, I = 1 mA GS(off) DS D Note3 Drain to source on state resistance R 173 225 m I = 0.8 A, V = 4.5 V DS(on) D GS Note3 Drain to source on state resistance R 207 290 m I = 0.8 A, V = 2.5 V DS(on) D GS Note3 Forward transfer admittance y 2.3 4 S I = 0.8 A, V = 10 V fs D DS Input capacitance Ciss 200 pF V = 10 V DS V = 0 Output capacitance Coss 25 pF GS f = 1 MHz Reverse transfer capacitance Crss 14 pF Turn - on delay time t 11 ns I = 0.8 A d(on) D V = 10 V GS Rise time t 27 ns r R = 12.5 L Turn - off delay time t 31 ns d(off) Rg = 4.7 Fall time t 4 ns f Total gate charge Qg 2.2 nC V = 10 V DD V = 4.5 V GS Gate to Source charge Qgs 0.4 nC I = 1.5 A D Gate to drain charge Qgd 0.7 nC Note3 Body - drain diode forward voltage V 0.8 V I = 1.5 A, V = 0 DF F GS Notes: 3. Pulse test R07DS0310EJ0300 Rev.3.00 Page 2 of 8 Jan 10, 2014