X-On Electronics has gained recognition as a prominent supplier of RQK2001HQDQA#H6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQK2001HQDQA#H6 MOSFETs are a product manufactured by Renesas. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQK2001HQDQA#H6 Renesas

RQK2001HQDQA#H6 electronic component of Renesas
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Part No.RQK2001HQDQA#H6
Manufacturer: Renesas
Category: MOSFETs
Description: MOSFET, N CH, 200V, 0.4A, SC-59A
Datasheet: RQK2001HQDQA#H6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.4174 ea
Line Total: USD 2.09 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 5
Multiples : 1
5 : USD 0.4174
10 : USD 0.3301
100 : USD 0.252
500 : USD 0.2254
1000 : USD 0.1934
5000 : USD 0.1783

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RQK2001HQDQA#H6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQK2001HQDQA#H6 and other electronic components in the MOSFETs category and beyond.

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Preliminary Datasheet RQK2001HQDQA R07DS0311EJ0300 Silicon N Channel MOS FET Rev.3.00 Power Switching Jan 10, 2014 Features High drain to source voltage and Low gate drive V : 200 V and V : 30 V DSS GSS Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 2 1. Source 1 G 2. Gate 3. Drain 2 S 1 Note: Marking isH. Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 200 V DSS Gate to source voltage V 30 V GSS Drain current I 0.4 A D Note1 Drain peak current I 1.6 A D(pulse) Body - drain diode reverse drain current I 0.4 A DR Note2 Channel dissipation Pch 0.8 W Note2 Thermal resistance Rth(ch-a) 156 C / W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, Duty cycle 1% 2. When using the glass epoxy board (FR-4 40 40 1 mm) R07DS0311EJ0300 Rev.3.00 Page 1 of 8 Jan 10, 2014 RQK2001HQDQA Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test conditions Drain to source breakdown voltage V 200 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source leak current I +0.1 A V = +30 V, V = 0 GSS GS DS Gate to source leak current I 0.1 A V = 30 V, V = 0 GSS GS DS Zero gate voltage drain current I 1 A V = 200 V, V = 0 DSS DS GS Gate to source cutoff voltage V 3 4.5 V V = 10 V, I = 1 mA GS(off) DS D Note3 Drain to source on state resistance R 5.0 6.7 I = 0.15 A, V =10 V DS(on) D GS Note3 Forward transfer admittance y 0.2 0.3 S I = 0.15 A, V = 10 V fs D DS Input capacitance Ciss 30 pF V = 25 V DS V = 0 GS Output capacitance Coss 5 pF f = 1 MHz Reverse transfer capacitance Crss 2 pF Turn - on delay time t 13 ns I = 0.15 A d(on) D V = 10 V Rise time t 12 ns GS r R = 667 L Turn - off delay time t 42 ns d(off) Rg = 50 Fall time t 38 ns f Total gate charge Qg 1.8 nC V = 100 V DD V = 10 V Gate to Source charge Qgs 0.4 nC GS I = 0.4 A D Gate to drain charge Qgd 0.9 nC Note3 Body - drain diode forward voltage V 0.8 1.2 V I = 0.4 A, V = 0 DF F GS Notes: 3. Pulse test R07DS0311EJ0300 Rev.3.00 Page 2 of 8 Jan 10, 2014

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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