Preliminary Datasheet RQJ0302NGDQA R07DS0294EJ0600 Silicon P Channel MOS FET Rev.6.00 Power Switching Jan 10, 2014 Features Low on-resistance R = 138 m typ (V = 10 V, I = 1.1 A) DS(on) GS D Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 G 1. Source 2 2. Gate 1 3. Drain 2 S 1 Note: Marking is NG. Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 30 V DSS Gate to source voltage V +10 / 20 V GSS Drain current I 2.2 A D Note1 Drain peak current I 5 A D(Pulse) Body - drain diode reverse drain current I 2.2 A DR Note2 Channel dissipation Pch 0.8 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board (FR-4: 40 40 1 mm) R07DS0294EJ0600 Rev.6.00 Page 1 of 7 Jan 10, 2014 RQJ0302NGDQA Preliminary Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V 30 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source breakdown voltage V +10 V I = +100 A, V = 0 (BR)GSS G DS Gate to source breakdown voltage V 20 V I = 100 A, V = 0 (BR)GSS G DS Gate to source leak current I +10 A V = +8 V, V = 0 GSS GS DS Gate to source leak current I 10 A V = 16 V, V = 0 GSS GS DS Drain to source leak current I 1 A V = 30 V, V = 0 DSS DS GS Gate to source cutoff voltage V 1.0 2.0 V V = 10 V, I = 1 mA GS(off) DS D Note3 Drain to source on state resistance R 138 173 m I = 1.1 A, V = 10 V DS(on) D GS Note3 R 216 303 m I = 1.1 A, V = 4.5 V DS(on) D GS Note3 Forward transfer admittance y 1.2 2.1 S I = 1.1 A, V = 10 V fs D DS Input capacitance Ciss 195 pF V = 10 V, V = 0, DS GS f = 1 MHz Output capacitance Coss 42 pF Reverse transfer capacitance Crss 29 pF Turn - on delay time t 19 ns I = 0.5 A, V = 10 V, d(on) D GS R = 20 , Rg = 4.7 Rise time t 25 ns L r Turn - off delay time t 30 ns d(off) Fall time t 4.6 ns f Total gate charge Qg 4.2 nC V = 10 V, V = 10 V, DD GS I = 2.2A Gate to source charge Qgs 0.7 nC D Gate to drain charge Qgd 1.0 nC Note3 Body - drain diode forward voltage V 0.9 V I = 1.5 A, V = 0 DF F GS Notes: 3. Pulse test R07DS0294EJ0600 Rev.6.00 Page 2 of 7 Jan 10, 2014