Preliminary Datasheet RQJ0305EQDQA R07DS0297EJ0300 Silicon P Channel MOS FET Rev.3.00 Power Switching Jan 10, 2014 Features Low gate drive V : 30 V and 2.5 V gate drive DSS Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 2 1. Source G 1 2. Gate 3. Drain 2 S 1 Notes: Marking isE. Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 30 V DSS Gate to source voltage V +8 / 12 V GSS Drain current I 2.4 A D Note1 Drain peak current I 10 A D(pulse) Body - drain diode reverse drain current I 2.4 A DR Note2 Channel dissipation Pch 0.8 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, Duty cycle 1% 2. When using the glass epoxy board (FR-4 40 40 1 mm) R07DS0297EJ0300 Rev.3.00 Page 1 of 8 Jan 10, 2014 RQJ0305EQDQA Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test conditions Drain to source breakdown voltage V 30 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source breakdown voltage V +8 V I = +100 A, V = 0 (BR)GSS G DS Gate to source breakdown voltage V 12 V I = 100 A, V = 0 (BR)GSS G DS Gate to source leak current I +10 A V = +6 V, V = 0 GSS GS DS Gate to source leak current I 10 A V = 10 V, V = 0 GSS GS DS Drain to source leak current I 1 A V = 30 V, V = 0 DSS DS GS Gate to source cutoff voltage V 0.4 1.4 V V = 10 V, I = -1 mA GS(off) DS D Note3 Drain to source on state resistance R 110 140 m I = 1.3 A, V = 4.5 V DS(on) D GS Note3 Drain to source on state resistance R 165 230 m I = 1.3 A, V = 2.5 V DS(on) D GS Note3 Forward transfer admittance y 2.6 3.9 S I = 1.3 A, V = 10 V fs D DS Input capacitance Ciss 330 pF V = 10 V, V = 0, DS GS Output capacitance Coss 70 pF f = 1 MHz Reverse transfer capacitance Crss 40 pF Turn - on delay time t 17 ns I = 1.3 A d(on) D V = 4.5 V Rise time t 37 ns GS r R = 7.7 Turn - off delay time t 39 ns L d(off) R = 4.7 g Fall time t 10 ns f Total gate charge Qg 3.0 nC V = 10 V DD V = 4.5 V Gate to Source charge Qgs 0.6 nC GS I = 2.4 A Gate to drain charge Qgd 1.3 nC D Note3 Body - drain diode forward voltage V 0.85 1.2 V I = 2.4 A, V = 0 DF F GS Notes: 3. Pulse test R07DS0297EJ0300 Rev.3.00 Page 2 of 8 Jan 10, 2014