X-On Electronics has gained recognition as a prominent supplier of UPA671T-T1-A MOSFET across the USA, India, Europe, Australia, and various other global locations. UPA671T-T1-A MOSFET are a product manufactured by Renesas. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

UPA671T-T1-A Renesas

UPA671T-T1-A electronic component of Renesas
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See Product Specifications
Part No.UPA671T-T1-A
Manufacturer: Renesas
Category: MOSFET
Description: Transistor
Low-power CMOS logic gate with open-drain output and input protection.
Datasheet: UPA671T-T1-A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4: USD 8.7892 ea
Line Total: USD 35.16

Availability - 0
MOQ: 4  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 09 Aug to Thu. 15 Aug
MOQ : 4
Multiples : 1
4 : USD 8.7892
10 : USD 6.8273

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Brand
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We are delighted to provide the UPA671T-T1-A from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UPA671T-T1-A and other electronic components in the MOSFET category and beyond.

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The UPA671T-T1-A is a Power MOSFET product from Renesas Electronics Corporation. It is a n-channel MOSFET and is comprised of a vertical double diffusion type of MOS structure. It features low on-resistance and low gate charge that allow it to operate in low noise, high-performance switching and amplification applications. This part has a drain-source voltage rating of 500V, a drain-gate voltage rating of 500V, an on-resistance of 4.2 mO, and an avalanche rating of 200V. This component is RoHS-compliant and is designed for use in medium- and high-power applications such as AC adapters, automotive systems, and LED lighting.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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