X-On Electronics has gained recognition as a prominent supplier of 1SS390FHTE61 across the USA, India, Europe, Australia, and various other global locations. 1SS390FHTE61 are a product manufactured by ROHM. We provide cost-effective solutions for 1SS390FHTE61, ensuring timely deliveries around the world.

1SS390FHTE61 ROHM

Name: 1SS390FHTE61
Brand: ROHM
SKU: 1SS390FHTE61_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

1SS390FHTE61 electronic component of ROHM

Images are for reference only
See Product Specifications

Part No.	1SS390FHTE61
Manufacturer:	ROHM
Category:	Unclassified
Description:	DIODE, SMALL SIG, AEC-Q101, 35V, SOD523
Datasheet:	1SS390FHTE61 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.6864 ea
Line Total: USD 3.43

Availability - 0

MOQ: 5 Multiples: 1
Pack Size: 1

1SS390FHTE61 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 11 Nov to Fri. 15 Nov MOQ : 5 Multiples : 1	5 : USD 0.6864 25 : USD 0.2317 100 : USD 0.1386 250 : USD 0.1079 500 : USD 0.0921 1000 : USD 0.0828

Specifications

Manufacturer ROHM ROHM
Product Category Unclassified Unclassified
Diode Configuration Single Single
Repetitive Reverse Voltage Vrrm Max 35 V 35 V
Forward Current If Av 100 mA 100 mA
Forward Voltage Vf Max 1 V 1 V
Reverse Recovery Time Trr Max - -
Forward Surge Current Ifsm Max - -
Operating Temperature Max 125 C 125 C
Diode Case Style Sod-523 Sod-523
No Of Pins 2Pins 2Pins
Packaging Cut Tape Cut Tape
Product Range Aec-Q101 Series Aec-Q101 Series
Svhc No Svhc (17-Dec-2015) No Svhc (17-Dec-2015)
Msl Msl 1 - Unlimited Msl 1 - Unlimited

We are delighted to provide the 1SS390FHTE61 from our ROHM manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1SS390FHTE61 and other electronic components in the ROHM manufacturer and beyond.

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Additional Infomation About Product

Data Sheet AEC-Q101 Qualified Band Switching Diode 1SS390FH Applications Dimensions (Unit : mm) Land size figure (Unit : mm) High frequency switching 0.80.05 0.120.05 0.8 Features 1)Ultra small mold type. (EMD2) 2)High reliability EMD2 Construction Silicon epitaxial Structure 0.30.05 0.60.1 JEDEC :SOD-523 ROHM : EMD2 JEITA : SC-79 Taping specifications (Unit : mm) 0.20.05 1.50.05 2.00.05 4.00.1 1.55 0.05 0.2 0.5 0.950.06 4.00.1 2.00.05 0.900.05 Empty pocket 0.760.05 0.75 0.05 0 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Forward current (DC) I 100 mA F Reverse voltage (DC) V 35 V R Junction temperature 125 Tj C Storage temperature -55 to +125 Tstg C Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V - - 1.0 V I =10mA F F I Reverse current - - 10 nA V =25V R R Capacitance between terminals Ct - - 1.2 pF V =6V , f=1MHz R Forward operating resistance =2mA , f=100MHz , RL=100 rf - - 0.9 I F www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.03 - Rev.D 2.402.450.0.015 1.251.300.06.06 00 1.20.05 1.60.1 0.6 0.6 3.50.05 1.750.1 8.00.15 1.25 0.06 1.260.05 0 0 1.7 1SS390FH Data Sheet 100 10 100 Ta=125 f=1MHz 10 Ta=125 10 Ta=75 1 Ta=75 1 0.1 Ta=25 1 Ta=25 0.01 Ta=-25 Ta=-25 0.1 0.001 0.1 0.0001 0.01 0 5 10 15 20 25 30 35 010 20 30 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 FORWARD VOLTAGEVF(V) REVERSE VOLTAGE:VR(V) REVERSE VOLTAGEVR(V) VR-Ct CHARACTERISTICS VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS 0.2 860 1 Ta=25 Ta=25 0.18 0.9 Ta=25 IF=100mA VR=25V VR=6V 0.16 850 n=30pcs n=30pcs 0.8 f=1MHz 0.14 0.7 AVE:0.849pF n=10pcs 0.12 0.6 840 0.1 0.5 0.08 0.4 830 AVE:840.2mV AVE:0.0145nA 0.3 0.06 0.2 820 0.04 0.1 0.02 0 810 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 100 20 100 1cyc Ifsm 15 8.3ms 10 10 10 AVE:4.95A 1 Ifsm 1 Ifsm 5 t 8.3ms 8.3ms 1cyc 0 0.1 0.1 1 10 100 0.1 1 10 100 TIME:t(ms) IFSM DISPERSION MAP NUMBER OF CYCLES IFSM-t CHARACTERISTICS IFSM-CYCLE CHARACTERISTICS 1000 0.2 0.2 Rth(j-a) DC 0.15 Sin(180) D=1/2 DC D=1/2 100 Rth(j-c) Mounted on epoxy board 0.1 0.1 IF=10mA IM=1mA Sin(180) 10 Io 0A 0.05 time 1ms 0V VR 300us t D=t/T VR=40V 1 0 0 Tj=125 T 0.001 0.1 10 1000 0 0.05 0.1 0.15 0.2 025 50 75 100 125 TIME:t(s) AVERAGE RECTIFIED AMBIENT TEMPERATURE:Ta() Rth-t CHARACTERISTICS FORWARD CURRENTIo(A) Derating Curve(Io-Ta) Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.03 - Rev.D PEAK SURGE TRANSIENT FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(mA) FORWARD VOLTAGE:VF(mV) THAERMAL IMPEDANCE:Rth (/W) FORWARD POWER PEAK SURGE REVERSE CURRENT:IR(nA) DISSIPATION:Pf(W) REVERSE CURRENT:IR(nA) FORWARD CURRENT:IFSM(A) AVERAGE RECTIFIDE CAPACITANCE BETWEEN CAPACITANCE BETWEEN PEAK SURGE FORWARD CURRENT:Io(A) TERMINALS:Ct(pF) TERMINALS:Ct(pF) FORWARD CURRENT:IFSM(A)

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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