X-On Electronics has gained recognition as a prominent supplier of BD52E60G-MTR across the USA, India, Europe, Australia, and various other global locations. BD52E60G-MTR are a product manufactured by ROHM. We provide cost-effective solutions for BD52E60G-MTR, ensuring timely deliveries around the world.

BD52E60G-MTR ROHM

BD52E60G-MTR electronic component of ROHM
BD52E60G-MTR ROHM
BD52E60G-MTR Unclassified
BD52E60G-MTR

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See Product Specifications
Part No. BD52E60G-MTR
Manufacturer: ROHM
Category: Unclassified
Description: ROHM Semiconductor
A 1-channel SPST analogue signal switch with IPMOS and CMOS FETs.
Datasheet: BD52E60G-MTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 1.1076 ea
Line Total: USD 5.54 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 5
Multiples : 1
5 : USD 1.1076
10 : USD 0.7141
100 : USD 0.5069
500 : USD 0.4521
1000 : USD 0.3596
5000 : USD 0.3106

   
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Digital Ic Case
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We are delighted to provide the BD52E60G-MTR from our ROHM manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BD52E60G-MTR and other electronic components in the ROHM manufacturer and beyond.

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The BD52E60G-MTR is a P-Channel Power MOSFET produced by ROHM Semiconductor. It is an enhancement-mode MOSFET with a maximum drain-source voltage of 60V, a maximum drain current of 18A and a maximum drain-source on-state resistance of 5.6mO. It is typically used for load switching and power control applications. The device also features logic-level gate drive capability and low gate-source capacitance, making it suitable for a wide range of high speed switching applications.

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