Product Information

BD8165MUV-E2

BD8165MUV-E2 electronic component of ROHM

Datasheet
Power Management Specialised - PMIC PNP Driver Transistor

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 8.9473 ea
Line Total: USD 8.95

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 6.419
10 : USD 5.9088
25 : USD 5.6359
100 : USD 5.0308
250 : USD 4.8054
500 : USD 4.4257
1000 : USD 4.0223
1500 : USD 4.0223
3000 : USD 4.0223

     
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1/4 STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT NAME Multi-Channel Power IC TYPE FEATURES Built-in 5-channel outputs for TFT-LCD Display Built-in VCOM AMP ABSOLUTE MAXIMUM RATINGS (Ta=25) PARAMETER SYMBOL LIMITS UNIT Supply Voltage 1 VCC,PVCC2,3 15 V LDVCC1 7 V Supply Voltage 2 Supply Voltage 3 HVCC 20 V SW1 Voltage VSW1 22 V Junction Temperature Tjmax 150 Pd 4826*1 mW Power Dissipation Operating Temperature Range Topr -40105 Storage Temperature Range Tstg -55150 *1 Decreased in done 38.6mW/ for operating above Ta25, mounted on 70701.6mm 4 layer Glass-epoxy PCB.(back foil 70.0mm70.0mm) OPERATING CONDITIONS (Ta=-40+105) Parameter Symbol MIN MAX Unit VCC,PVCC2,3 4.2 14 V Supply Voltage 1 Supply Voltage 2 LDVCC1 - 5.5 V HVCC 6 18 V Supply Voltage 3 SW1 Voltage VSW1 - 18 V Status of this document The Japanese version of this document is the formal specification. A customer may use this translation version only for a reference to help reading the formal version. If there are any differences in translation version of this document, formal version takes priority. REV. D 2/4 ELECTRICAL CHARACTERISTICSUnless otherwise specified, Ta=25,VCC=12V,HVCC=15V Limit Parameter Symbol Unit Condition MIN TYP MAX DC/DC BLOCK Feed Back Voltage 1 VFB1 1.230 1.250 1.270 V Feed Back Voltage 2 VFB2 1.225 1.250 1.275 V Feed Back Voltage 3 VFB3 0.882 0.900 0.918 V FB Input Bias Current IFB -1.2 0.1 1.2 uA COMP Source Current ICSO 15 40 65 uA COMP Sink Current ICSI -65 -40 -15 uA MAX Duty MDT 80 90 - % LDO1,LDO3 BLOCK LDO Feed Back Voltage LDFB 1.231 1.25 1.269 V Drop Voltage 1 DPLD1 - 0.3 1.0 V LDFB1=1.0V, Io=500mA Drop Voltage H DPLDH - 0.4 0.9 V LDFB H=1.0V, Io=100mA Charge Pump BLOCK Feed Back Voltage CPFB 1.225 1.25 1.275 V Drop Voltage 1 DPCPP 0.14 0.35 0.78 V Io=100mA Drop Voltage 2 DPCPN 0.28 0.7 1.55 V Io=100mA Operational Amplifier BLOCK Input Offset Voltage VOFF -15 0 15 mV VCOM Output Current ICOM 60 150 - mA Load Regulation Vo -15 1 15 mV Io=+1mA-1mA Maximum Output Voltage VoH HVCC-1.0HVCC-0.8 - V Io=-1mA, IN=HVCC-0.8V Minimum Output Voltage VoL - 0.1 0.16 V Io=1mA, IN=0V WHOLE Reference Voltage VREF 2.46 2.53 2.60 V Oscillation Frequency FSW 550 650 750 kHz UVLO Voltage UVLO 0.88 - 1.17 V Average Supply Current (VCC,PVCC2,3) ICC - 5 11 mA No Switching Average Supply Current (HVCC) HICC - 1.0 4 mA No Switching This product is not designed for protection against radioactive rays. PHYSICAL DIMENSIONMARKING (VQFN048V7070) BD8165 LOT NO Marking (UNIT:mm) REV. D

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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