Datasheet AC/DC Drivers PWM type DC/DC converter IC Included 650V MOSFET BM2PXX4F Series General Features The PWM type DC/DC converter (BM2PXX4F) for PWM frequency : 65kHz AC/DC provide an optimum system for all products PWM current mode method that include an electrical outlet. Burst operation when load is light BM2PXX4F supports both isolated and non-isolated Frequency reduction function devices, enabling simpler design of various types of Built-in 650V start circuit low-power electrical converters. Built-in 650V switching MOSFET BM2PXX4F built in a HV starter circuit that tolerates VCC pin under voltage protection 650V, it contributes to low-power consumption. VCC pin overvoltage protection With current detection resistors as external devices, a SOURCE pin Open protection higher degree of design freedom is achieved. Since SOURCE pin Short protection current mode control is utilized, current is restricted in SOURCE pin Leading-Edge-Blanking function each cycle and excellent performance is demonstrated Per-cycle over current protection circuit in bandwidth and transient response. Soft start The switching frequency is 65 kHz. At light load, the Secondary Over current protection circuit switching frequency is reduced and high efficiency is achieved. Package W (Typ.) x D (Typ.) x H (Max.) A frequency hopping function is also built, which SOP8 5.00mm x 6.20mm x 1.71mm contributes to low EMI. We can design easily, because BM2PXX4F includes the switching MOSFET. Basic specifications Operating Power Supply Voltage Range: VCC 8.9V to 26.0V DRAIN650V Applications Operating Current: Normal Mode AC adapters and household appliances (vacuum BM2P054F: 0.60mA (Typ.) BM2P094F: 0.50mA (Typ.) cleaners, humidifiers, air cleaners, air conditioners, IH Burst Mode: 0.40mA (Typ.) cooking heaters, rice cookers, etc.) Oscillation Frequency: 65kHz (Typ.) o o Operating Temperature: - 40 C to +105 C Line Up MOSFET ON Resistance: BM2P054F: 4.0 (Typ.) Product MOSFET ON resistor BM2P094F: 8.5 (Typ.) Application circuit BM2P054F 4.0 BM2P094F 8.5 Figure 1Application circuit Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays . www.rohm.com TSZ02201-0F2F0A200080-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/19 7. Mar.2017.Rev.009 TSZ22111 14 001 DatasheetDatasheet BM2PXX4F Series Absolute Maximum RatingsTa=25C Parameter Symbol Rating Unit Conditions Maximum applied voltage 1 Vmax1 -0.330 V VCC Maximum applied voltage 2 Vmax2 -0.36.5 V SOURCE, FB Maximum applied voltage 3 V max3 650 V DRAIN P =10us, Duty cycle=1% W Drain current pulse I 2.60 A DP (BM2P054F) P =10us, Duty cycle=1% W Drain current pulse I 1.30 A DP (BM2P094F) Allowable dissipation Pd 563 mW When implemented o Operating temperature range Topr -40 +105 C o MAX junction temperature T 150 C JMAX o Storage temperature range Tstr -55 +150 C (Note1) SOP8 : When mounted (on 70 mm 70 mm, 1.6 mm thick, glass epoxy on single-layer substrate). Reduce to 4.504 mW/C when Ta = 25C or above. Operating ConditionsTa=25C Parameter Symbol Rating Unit Conditions Power supply voltage range 1 V 8.926.0 V VCC pin voltage CC Power supply voltage range 2 V 650 V DRAIN pin voltage DRAIN Electrical Characteristics of MOSFET part (Unless otherwise noted, Ta = 25C, VCC = 15 V) Specifications Parameter Symbol Unit Conditions Min Typ Max MOSFET Block Between drain and V 650 - - V I =1mA / V =0V (BR)DDS D GS source voltage Drain leak current I - - 100 uA V =650V / V =0V DSS DS GS I =0.25A / V =10V D GS On resistance R - 4.0 5.5 DS(ON) (BM2P054F) I =0.25A / V =10V D GS On resistance R - 8.5 12.0 DS(ON) (BM2P094F) www.rohm.com TSZ02201-0F2F0A200080-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/19 7. Mar.2017.Rev.009 TSZ22111 15 001